南方科技大学知识苑(SUSTech KC): Rapid subsurface damage detection of SiC using inductivity coupled plasma

题名	Rapid subsurface damage detection of SiC using inductivity coupled plasma
作者	Zhang，Yi1,2 ; Zhang，Linfeng1 ; Chen，Keyu 1; Liu，Dianzi 2; Lu，Dong1 ; Deng，Hui1
通讯作者	Deng，Hui
发表日期	2021-07-01
DOI	10.1088/2631-7990/abff34
发表期刊	International Journal of Extreme Manufacturing 影响因子和分区
ISSN	2631-8644
EISSN	2631-7990
卷号	3 期号:3
摘要	This paper proposes a method for the rapid detection of subsurface damage (SSD) of SiC using atmospheric inductivity coupled plasma. As a plasma etching method operated at ambient pressure with no bias voltage, this method does not introduce any new SSD to the substrate. Plasma diagnosis and simulation are used to optimize the detection operation. Assisted by an SiC cover, a taper can be etched on the substrate with a high material removal rate. Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results, and scanning transmission electron microscope (STEM) is adopted to confirm the accuracy of this method. The STEM result also indicates that etching does not introduce any SSD, and the thoroughly etched surface is a perfectly single crystal. A rapid SSD screening ability is also demonstrated, showing that this method is a promising approach for the rapid detection of SSD.
关键词	ICP etching Silicon carbide SSD detection Subsurface damage
相关链接	[Scopus记录]
收录类别	ESCI ; EI
语种	英语
学校署名	第一 ; 通讯
WOS记录号	WOS:000663555700001
EI入藏号	20212410496310
EI主题词	Inductively coupled plasma ; Scanning ; Scanning electron microscopy ; Silicon ; Silicon carbide ; Silicon compounds ; Single crystals ; Transmission electron microscopy
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Inorganic Compounds:804.2 ; Plasma Physics:932.3 ; Crystalline Solids:933.1
Scopus记录号	2-s2.0-85107704367
来源库	Scopus
引用统计	被引频次[WOS]：29
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/242462
专题	工学院_机械与能源工程系
作者单位	1.Department of Mechanical and Energy Engineering,Southern University of Science and Technology,Shenzhen,No. 1088, Xueyuan Road, Guangdong,518055,China 2.School of Engineering,Faculty of Science,University of East Anglia,Norwich Research Park,Norwich,NR4 7TJ,United Kingdom
第一作者单位	机械与能源工程系
通讯作者单位	机械与能源工程系
第一作者的第一单位	机械与能源工程系
推荐引用方式 GB/T 7714	Zhang，Yi,Zhang，Linfeng,Chen，Keyu,et al. Rapid subsurface damage detection of SiC using inductivity coupled plasma[J]. International Journal of Extreme Manufacturing,2021,3(3).
APA	Zhang，Yi,Zhang，Linfeng,Chen，Keyu,Liu，Dianzi,Lu，Dong,&Deng，Hui.(2021).Rapid subsurface damage detection of SiC using inductivity coupled plasma.International Journal of Extreme Manufacturing,3(3).
MLA	Zhang，Yi,et al."Rapid subsurface damage detection of SiC using inductivity coupled plasma".International Journal of Extreme Manufacturing 3.3(2021).