题名 | Flow characteristics of low pressure chemical vapor deposition in the micro-channel |
作者 | |
通讯作者 | Zhang, Yue |
发表日期 | 2021-08-01
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DOI | |
发表期刊 | |
ISSN | 1070-6631
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EISSN | 1089-7666
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卷号 | 33期号:8 |
摘要 | Chemical vapor deposition is a method of producing thin films by chemical reactions on the substrate surface. The preparation of semiconductor devices, graphene fiber materials, carbon nanotubes, and other materials by this method involves the reaction of the rarefied gas flows. In this paper, the flow characteristics of two-component dilute gases containing methane and hydrogen are studied by numerical simulation, which also provides an explanation for the experimental phenomena of graphene growth in rarefied conditions. To reveal the reaction mechanism from the perspective of molecular collision effects, the competitive mechanism between the collision effects in the bulk region and on the substrate surface is studied over a wide range of Kn. It is found that the collisions in the bulk region dominate at moderate Kn (0.1-5), while the surface collisions are prevailing at large Kn (Kn > 5). Furthermore, the influence of inlet gas temperature, Kn, and aspect ratio of a single channel on system temperature distribution is also studied. The results show that the temperature distribution is symmetrical for a rarefied system, while it is asymmetric when the system is in the near continuum regime. Furthermore, the change in aspect ratio has little effect on the temperature distribution. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
|
资助项目 | National Natural Science Foundation of China[12002131]
; China Postdoctoral Science Foundation[2020M672347]
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WOS研究方向 | Mechanics
; Physics
|
WOS类目 | Mechanics
; Physics, Fluids & Plasmas
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WOS记录号 | WOS:000686748400007
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出版者 | |
EI入藏号 | 20213510836181
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EI主题词 | Aspect ratio
; Graphene
; Semiconductor devices
; Substrates
; Surface reactions
; Temperature distribution
|
EI分类号 | Thermodynamics:641.1
; Semiconductor Devices and Integrated Circuits:714.2
; Nanotechnology:761
; Chemical Reactions:802.2
; Chemical Products Generally:804
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ESI学科分类 | PHYSICS
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来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:2
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/244959 |
专题 | 工学院_力学与航空航天工程系 |
作者单位 | 1.Huazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R China 2.Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem, Beijing Sci & Engn Ctr Nanocarbons,Beijing Natl L, Beijing 100871, Peoples R China 3.Southern Univ Sci & Technol, Dept Mech & Aerosp Engn, Shenzhen 518055, Guangdong, Peoples R China |
推荐引用方式 GB/T 7714 |
Yang, Zhou,Zhang, Yue,Cheng, Yi,et al. Flow characteristics of low pressure chemical vapor deposition in the micro-channel[J]. PHYSICS OF FLUIDS,2021,33(8).
|
APA |
Yang, Zhou,Zhang, Yue,Cheng, Yi,Liu, Zhongfan,&Chen, Songze.(2021).Flow characteristics of low pressure chemical vapor deposition in the micro-channel.PHYSICS OF FLUIDS,33(8).
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MLA |
Yang, Zhou,et al."Flow characteristics of low pressure chemical vapor deposition in the micro-channel".PHYSICS OF FLUIDS 33.8(2021).
|
条目包含的文件 | 条目无相关文件。 |
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