Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs

Hua, Mengyuan1,2; Yang, Song2; Zheng, Zheyang2; Wei, Jin2; Zhang, Zhaofu2; Chen, Kevin J.2

10.1109/ISPSD.2019.8757600

2019

1063-6854

978-1-7281-0582-6

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)

2019-May

467-470

19-23 May 2019

Shanghai, China

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

In this work, reliability characterization under reverse-bias (i.e. off-state with high V-DS) stress was conducted on the E-mode GaN MIS-FETs with different substrate terminations. The MIS-FETs with a floating substrate exhibit stronger V-TH instability than those with a grounded substrate. A non-monotonic dependence of V-TH shifts on the positive substrate bias was also observed. The underlying mechanisms are proposed to be the impacts of positive substrate bias on holes drift during long-term reverse-bias stress.

GaN MIS-FET reverse-bias stress reliability substrate termination

第一 ; 通讯

英语

CPCI-S ; EI

Ministry of Science and Technology of the People's Republic of China[2017YFB0403002]

Computer Science ; Engineering

Computer Science, Hardware & Architecture ; Engineering, Electrical & Electronic

WOS:000484987200115

20193207270887

Gallium nitride ; III-V semiconductors ; Integrated circuits ; Reliability ; Wide band gap semiconductors

Semiconductor Devices and Integrated Circuits:714.2

Web of Science

1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China
2.Hong Kong Univ Sci & Technol, HKUST Shenzhen Res Inst, Shenzhen, Peoples R China

Hua, Mengyuan,Yang, Song,Zheng, Zheyang,et al. Effects of Substrate Termination on Reverse-bias Stress Reliability of Normally-off Lateral GaN-on-Si MIS-FETs[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2019:467-470.