Size-dependence characterization of gan-based green microled

Zhanghu，Mengyuan; Feng，Yang; Liu，Zhaojun

10.1002/sdtp.14939

2021

0097-966X

2168-0159

Digest of Technical Papers - SID International Symposium

52

1

1298-1301

GaN-based light-emitting diode (LED) arrays are a promising technology in a wide range of applications. Research on size dependence performance is important in GaN-based LED. In this paper, we study the electrical properties of 100μm, 150μm, and 200μm devices. The ideal factor is calculated by measuring the current density-voltage characteristics to study the carrier transport mechanism. It is found that the forward low bias voltage part is mainly composed of recombination current and diffusion current. The current density in the high bias voltage part depends on the current crowding effect. The temperature variation study proves that the ideal factor has no size dependence. Besides, the electroluminescence (EL) spectrum is studied to understand size dependence in GaN internal structure. As the size decreases, the quantum confinement Stark effect (QCSE) will be suppressed, which is proved by the relationship between optical power and turn-on voltage. These studies indicate that the application of Micro-LED and even smaller-sized Micro-LEDs has unlimited possibilities and broad prospects.

GaN LED Micro-LED Size dependence Green LED

第一

英语

EI

20213510840831

Electroluminescence ; Gallium nitride ; III-V semiconductors ; Light emitting diodes

Electronic Circuits:713 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light, Optics and Optical Devices:741

2-s2.0-85113862847

Scopus

Department of Electric and Electronic Engineering,Southern University of Science and Technology,Shenzhen,China

Zhanghu，Mengyuan,Feng，Yang,Liu，Zhaojun. Size-dependence characterization of gan-based green microled[C],2021:1298-1301.