Electro-optical properties investigation in algainp-based red micro-led devices

Feng，Yang; Zhanghu，Mengyuan; Lin，Yonghong; Liu，Zhaojun

10.1002/sdtp.14940

2021

0097-966X

2168-0159

Digest of Technical Papers - SID International Symposium

52

1

1302-1304

AlGaInP-based light-emitting diode (LED) arrays are a promising technology in a wide range of applications. The electrical characteristics and current transport properties of AlGaInP-based red micro-light-emitting diodes were investigated using current-voltage (I-V) measurements. The ideality factor of device was obtained, indicating that the current conduction mechanism is defect-assisted tunneling, which forms parasitic current paths across the active region. These results were consistent with the parasitic resistances obtained from the measured current-voltage curves. It was attributed that the defects originated from sidewall damage of the active layer. The EL spectrum of the red micro-LED is characterized by narrow emission width of ~19 nm.

EL Micro-LED Size dependence

第一

英语

EI

20213510840832

Current voltage characteristics ; Defects ; III-V semiconductors ; Light emitting diodes

Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Materials Science:951

2-s2.0-85113861777

Scopus

Department of Electric and Electronic Engineering,Southern University of Science and Technology,Shenzhen,China

Feng，Yang,Zhanghu，Mengyuan,Lin，Yonghong,et al. Electro-optical properties investigation in algainp-based red micro-led devices[C],2021:1302-1304.