Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution

Liu，Kailang1; Chen，Xiang2; Gong，Penglai3; Yu，Ruohan4; Wu，Jinsong4; Li，Liang5; Han，Wei1; Yang，Sanjun1; Zhang，Chendong6; Deng，Jinghao6; Li，Aoju1; Zhang，Qingfu1; Zhuge，Fuwei1; Zhai，Tianyou1

2021

10.1016/j.scib.2021.07.010

Science Bulletin   影响因子和分区

2095-9273

2095-9281

Strain engineering is a promising method for tuning the electronic properties of two-dimensional (2D) materials, which are capable of sustaining enormous strain thanks to their atomic thinness. However, applying a large and homogeneous strain on these 2D materials, including the typical semiconductor MoS, remains cumbersome. Here we report on a facile strategy for the fabrication of highly strained MoS via chalcogenide substitution reaction (CSR) of MoTe with lattice inheritance. The MoS resulting from the sulfurized MoTe sustains ultra large in-plane strain (approaching its strength limit ~10%) with great homogeneity. Furthermore, the strain can be deterministically and continuously tuned to ~1.5% by simply varying the processing temperature. Thanks to the fine control of our CSR process, we demonstrate a heterostructure of strained MoS/MoTe with abrupt interface. Finally, we verify that such a large strain potentially allows the modulation of MoS bandgap over an ultra-broad range (~1 eV). Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices.

2D materials Chalcogenide substitution Controllable strain Lattice inheritance Strain engineering

EI

英语

其他

20213210730192

Chalcogenides ; Electronic properties ; Layered semiconductors ; Molybdenum compounds ; Processing ; Substitution reactions ; Tellurium compounds

Semiconducting Materials:712.1 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Manufacturing:913.4 ; Materials Science:951

2-s2.0-85111839568

Scopus

1.State Key Laboratory of Materials Processing and Die & Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan,430074,China
2.Nano and Heterogeneous Materials Center,School of Materials Science and Engineering,Nanjing University of Science and Technology,Nanjing,210094,China
3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
4.State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,Nanostructure Research Center,Wuhan University of Technology,Wuhan,430070,China
5.Institutes of Physical Science and Information Technology,Anhui University,Hefei,231699,China
6.School of Physics and Technology,Wuhan University,Wuhan,430072,China

Liu，Kailang,Chen，Xiang,Gong，Penglai,et al. Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution[J]. Science Bulletin,2021,67:45-53.

Liu，Kailang.,Chen，Xiang.,Gong，Penglai.,Yu，Ruohan.,Wu，Jinsong.,...&Zhai，Tianyou.(2021).Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution.Science Bulletin,67,45-53.

Liu，Kailang,et al."Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution".Science Bulletin 67(2021):45-53.