An Absolute Capacitive Pressure Sensor Based on a SiMiT-Fabricated Vacuum Cavity

Hu，Yushen1,2; Wang，Fei2; Wong，Man1

10.1109/Transducers50396.2021.9495734

2021-06-20

21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)

2167-0013

2167-0021

978-1-6654-4845-1

21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021

1170-1173

JUN 20-25, 2021

null,null,ELECTR NETWORK

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

Requiring no etching of a sacrificial layer and allowing the use of conventional aluminum metallization, a simple fabrication process based on the silicon-migration technology (SiMiT) conducted in hydrogen is employed in the construction of a sealed vacuum cavity separating a thin silicon diaphragm from a rigid substrate. With the pressure-deformable diaphragm serving as a dielectrically insulated electrode, the cavity providing an absolute reference pressure and the substrate forming a counter-electrode, the combination makes a capacitive absolute pressure sensor. A prototype sensor has been demonstrated, exhibiting a sensitivity of 2.3 aF/Pa.

Capacitive absolute pressure sensor silicon-migration technology (SiMiT) vacuum cavity

其他

英语

CPCI-S ; EI

Engineering ; Instruments & Instrumentation

Engineering, Electrical & Electronic ; Instruments & Instrumentation

WOS:000707041600304

20213810908543

Actuators ; Capacitive sensors ; Electrodes ; Etching ; Fabrication ; Microsystems ; Pressure sensors ; Substrates

Control Devices:732 ; Chemical Reactions:802.2 ; Pressure Measuring Instruments:944.3

2-s2.0-85114962492

Scopus

1.Hong Kong University of Science and Technology,Hong Kong,Hong Kong
2.Southern University of Science and Technology,China

Hu，Yushen,Wang，Fei,Wong，Man. An Absolute Capacitive Pressure Sensor Based on a SiMiT-Fabricated Vacuum Cavity[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2021:1170-1173.