题名 | High Performance Inkjet-Printed Quantum-Dot Light-Emitting Diodes with High Operational Stability |
作者 | |
通讯作者 | Liu,Pai |
发表日期 | 2021
|
DOI | |
发表期刊 | |
EISSN | 2195-1071
|
卷号 | 9 |
摘要 | Improving the stability of inkjet-printed quantum dot light emitting diodes (QLEDs) is critical for the technology to become commercially viable. The major obstacle is the compromise between the printability of the ink system and the functionality of the carrier transport layers. Here, a ternary ink system consisting of octane, 1-cyclohexyl-ethanol, and n-butyl acetate is reported, which solves the erosion between the printed quantum dot ink and the underneath hole transport layer. A gradient vacuum post-treatment is developed to accompany the ternary ink system with gradient vacuum pressures, which is helpful in forming a uniform printing layer. Based on both technologies, the inkjet-printed R/G/B QLEDS are fabricated with high resolution patterns, showing high efficiencies and stabilities. The external quantum efficiency of R/G/B devices is 19.3%, 18.0%, and 4.4%, respectively. Correspondingly, the half operating lifetime is up to 25 178 h @ 1000 cd m, 20 655 h @ 1000 cd m, and 46 h @ 100 cd m, respectively. The improvements in the ink engineering and post-treatment in this study have taken the efficiency and stability of the devices to a higher level and confirm the application prospects of printed QLEDs in the display industry. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
WOS记录号 | WOS:000695033800001
|
EI入藏号 | 20213710888236
|
EI主题词 | Display devices
; Efficiency
; Ink
; Nanocrystals
; Quantum chemistry
; Quantum efficiency
; Semiconductor quantum dots
|
EI分类号 | Semiconductor Devices and Integrated Circuits:714.2
; Computer Peripheral Equipment:722.2
; Nanotechnology:761
; Physical Chemistry:801.4
; Chemical Products Generally:804
; Production Engineering:913.1
; Quantum Theory; Quantum Mechanics:931.4
|
Scopus记录号 | 2-s2.0-85114695983
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:42
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/245984 |
专题 | 工学院_电子与电气工程系 工学院_材料科学与工程系 |
作者单位 | 1.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology),Ministry of Education,and Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China 2.Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices,Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting,and Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China 3.Department of Materials Science and Engineering,Jilin University,Changchun,130025,China 4.Shenzhen Planck Innovation Technologies Co. Ltd.,Shenzhen,518055,China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Jia,Siqi,Tang,Haodong,Ma,Jingrui,et al. High Performance Inkjet-Printed Quantum-Dot Light-Emitting Diodes with High Operational Stability[J]. Advanced Optical Materials,2021,9.
|
APA |
Jia,Siqi.,Tang,Haodong.,Ma,Jingrui.,Ding,Shihao.,Qu,Xiangwei.,...&Sun,Xiao Wei.(2021).High Performance Inkjet-Printed Quantum-Dot Light-Emitting Diodes with High Operational Stability.Advanced Optical Materials,9.
|
MLA |
Jia,Siqi,et al."High Performance Inkjet-Printed Quantum-Dot Light-Emitting Diodes with High Operational Stability".Advanced Optical Materials 9(2021).
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条目包含的文件 | ||||||
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