Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3

Zhang，Xiaoqian1,2,3; Ambhire，Siddhesh C.4; Lu，Qiangsheng2; Niu，Wei5; Cook，Jacob2; Jiang，Jidong Samuel6; Hong，Deshun6; Alahmed，Laith7; He，Liang1; Zhang，Rong1; Xu，Yongbing1,8; Zhang，Steven S.L.4; Li，Peng7; Bian，Guang2

2021

10.1021/acsnano.1c05519

ACS Nano   影响因子和分区

1936-0851

1936-086X

Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin-orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 μω·cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.

epitaxial growth topological Hall effect topological insulators two-dimensional ferromagnets van der Waals materials

EI ; SCI

英语

NI论文

其他

National Key Research and Development Program of China["2016YFA0300803","2017YFA0206304"] ; National Basic Research Program of China[2014CB921101] ; National Natural Science Foundation of China[61427812,11774160,11574137,61474061,61674079] ; Natural Science Foundation of Jiangsu Province of China["BK20192006","BK20140054"] ; US National Science Foundation (NSF-DMR)[1809160] ; NSF[DMR-2129879335] ; Natural Science Foundation of China[11904174] ; Natural Science Foundation of Jiangsu Province[BK20190729] ; NUPTSF["NY219024","NY220203"] ; Natural Science Foundation of the Jiangsu Higher Education Institutions of China[19KJB510047] ; U.S. DOE, BES[DE-AC02-06CH11357]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000711790600020

AMER CHEMICAL SOC

20213710885808

Bismuth compounds ; Chromium compounds ; Ferromagnetism ; Hybrid systems ; Molecular beam epitaxy ; Spin orbit coupling ; Textures ; Topology ; Van der Waals forces ; Virtual storage

Magnetism: Basic Concepts and Phenomena:701.2 ; Data Storage, Equipment and Techniques:722.1 ; Physical Chemistry:801.4 ; Mathematics:921 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4 ; Atomic and Molecular Physics:931.3

2-s2.0-85114644794

Scopus

1.Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing,210093,China
2.Department of Physics and Astronomy,University of Missouri,Columbia,65211,United States
3.Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
4.Department of Physics,Case Western Reserve University,Cleveland,44106,United States
5.New Energy Technology Engineering Laboratory of Jiangsu Provence,School of Science,Nanjing University of Posts and Telecommunications,Nanjing,210023,China
6.Materials Science Division,Argonne National Laboratory,Lemont,60439,United States
7.Department of Electrical and Computer Engineering,Auburn University,Auburn,36849,United States
8.York-Nanjing Joint Centre (YNJC) for spintronics and nano engineering,Department of Electronic Engineering,The University of York,York,YO10 3DD,United Kingdom

Zhang，Xiaoqian,Ambhire，Siddhesh C.,Lu，Qiangsheng,et al. Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3[J]. ACS Nano,2021,15(10):15710-15719.

Zhang，Xiaoqian.,Ambhire，Siddhesh C..,Lu，Qiangsheng.,Niu，Wei.,Cook，Jacob.,...&Bian，Guang.(2021).Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3.ACS Nano,15(10),15710-15719.

Zhang，Xiaoqian,et al."Giant Topological Hall Effect in van der Waals Heterostructures of CrTe2/Bi2Te3".ACS Nano 15.10(2021):15710-15719.