题名 | Correlations of Ionic Migration and Deep-Level Traps Leads to Surface Defect Formation in Perovskite Solar Cells |
作者 | |
发表日期 | 2021
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DOI | |
发表期刊 | |
ISSN | 1932-7447
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EISSN | 1932-7455
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卷号 | 125期号:35页码:19551-19559 |
摘要 | Correlations between ion migration, charge carrier, and bulk deep-level defect in MAPbI3 perovskites are systematically invesitgated through voltage-dependent thermal admittance spectroscopy and in situ scanning probe microscopy. We show that iodine interstitials construct stable, deep-level bulk defects in the polycrystalline MAPbI3 with an activation energy (EA) level of 0.495 eV above the valence band maximum. Experimentally, EA varied with depletion region distribution and excess electron from charge transport layers, which can be modulated through external bias. Under forward bias, mobile bulk defects migrate and transform into surface defect states, introducing additional nonradiative recombination pathways. Overall, this study directly reveals electronic correlations between defect ions and charge carriers, pointing out the importance of iodine defect chemistry in surface recombination and degradation in long-term device stabilities. |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 其他
|
资助项目 | National Natural Science Foundation of China[52003288,61774164,22003074]
; National Key R&D Program of China[2018YFB1500200]
; Shenzhen Science and Technology Program["JCYJ20200109114801744","JCYJ20190807161001747"]
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WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
|
WOS类目 | Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
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WOS记录号 | WOS:000696175400052
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出版者 | |
EI入藏号 | 20213710886134
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EI主题词 | Activation energy
; Carrier mobility
; Iodine
; Perovskite
; Scanning probe microscopy
; Surface defects
|
EI分类号 | Minerals:482.2
; Semiconducting Materials:712.1
; Chemistry:801
; Chemical Products Generally:804
; Materials Science:951
|
Scopus记录号 | 2-s2.0-85114627836
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:12
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/245998 |
专题 | 工学院_材料科学与工程系 |
作者单位 | 1.Shenzhen Institutes of Advanced Technology,Chinese Academy of Sciences,Shenzhen,518055,China 2.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China 3.Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education,School of Materials Science and Engineering,Xiangtan University,Xiangtan,Hunan,411105,China 4.State Key Laboratory of Superhard Materials,College of Physics,Jilin University,Changchun,130012,China |
推荐引用方式 GB/T 7714 |
Zheng,Xue,Wang,Xiao,Li,Weimin,et al. Correlations of Ionic Migration and Deep-Level Traps Leads to Surface Defect Formation in Perovskite Solar Cells[J]. Journal of Physical Chemistry C,2021,125(35):19551-19559.
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APA |
Zheng,Xue.,Wang,Xiao.,Li,Weimin.,Liu,Zhenghao.,Ming,Wenjie.,...&Yang,Chunlei.(2021).Correlations of Ionic Migration and Deep-Level Traps Leads to Surface Defect Formation in Perovskite Solar Cells.Journal of Physical Chemistry C,125(35),19551-19559.
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MLA |
Zheng,Xue,et al."Correlations of Ionic Migration and Deep-Level Traps Leads to Surface Defect Formation in Perovskite Solar Cells".Journal of Physical Chemistry C 125.35(2021):19551-19559.
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条目包含的文件 | 条目无相关文件。 |
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