Fully-on-Chip Digitally Assisted LDO Regulator with Improved Regulation and Transient Responses

Li, Han; Zhan, Chenchang; Zhang, Ning

10.1109/ISVLSI.2018.00038

2018

21593477

2159-3477

978-1-5386-7100-9

2018 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI)

2018-July

160-163

8-11 July 2018

Hong Kong, Hong kong

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

This paper proposes a fully-on-chip mixed-mode low-dropout (LDO) regulator with regulation and transient response enhanced. A Miller compensation capacitor and a buffer stage are used to achieve stability and improve power MOS gate slew rate. The ultra-fast voltage buffer helps further improve the load transient recovery speed and reduce the chip area due to its wider voltage swing. With the help of the digital regulation part, the supported maximum load current is significantly improved. The proof-of-concept LDO design is fabricated in a standard 0.18-gm CMOS technology. The maximum load current is 150 mA, the output voltage is 1 V and the dropout voltage is 0.2 V. The load regulation is 0.17 mV/mA.

Mixed LDO output-capacitor-free load regulation load transient adaptive biasing (AB)

第一 ; 通讯

英语

CPCI-S ; EI

Shenzhen Science and Technology Innovation Committee (SZSTI)[JCYJ20160530191008447]

Computer Science ; Engineering

Computer Science, Hardware & Architecture ; Computer Science, Theory & Methods ; Engineering, Electrical & Electronic

WOS:000443443500028

20183505744394

Buffer amplifiers ; Electric current regulators ; VLSI circuits ; Voltage regulators

Amplifiers:713.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Control Equipment:732.1

Web of Science

Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China

Li, Han,Zhan, Chenchang,Zhang, Ning. Fully-on-Chip Digitally Assisted LDO Regulator with Improved Regulation and Transient Responses[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2018:160-163.