Improved perovskite phototransistor prepared using multi-step annealing method

Cao, Mingxuan1,2,3; Zhang, Yating1,2,3; Yu, Yu1,2,3; Yao, Jianquan1,2,3

10.1117/12.2289387

2018

1996756X

1996-756X

ORGANIC PHOTONIC MATERIALS AND DEVICES XX

10529

San Francisco, CA, United states

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

SPIE-INT SOC OPTICAL ENGINEERING

Organic-inorganic hybrid perovskites with good intrinsic physical properties have received substantial interest for solar cell and optoelectronic applications. However, perovskite film always suffers from a low carrier mobility due to its structural imperfection including sharp grain boundaries and pinholes, restricting their device performance and application potential. Here we demonstrate a straightforward strategy based on multi-step annealing process to improve the performance of perovskite photodetector. Annealing temperature and duration greatly affects the surface morphology and optoelectrical properties of perovskites which determines the device property of phototransistor. The perovskite films treated with multi-step annealing method tend to form highly uniform, well-crystallized and high surface coverage perovskite film, which exhibit stronger ultraviolet-visible absorption and photoluminescence spectrum compare to the perovskites prepared by conventional one-step annealing process. The field-effect mobilities of perovskite photodetector treated by one-step direct annealing method shows mobility as 0.121 (0.062) cm(2)V(-1)s(-1) for holes (electrons), which increases to 1.01 (0.54) cm(2)V(-1)s(-1) for that treated with muti-step slow annealing method. Moreover, the perovskite phototransistors exhibit a fast photoresponse speed of 78 mu s. In general, this work focuses on the influence of annealing methods on perovskite phototransistor, instead of obtains best parameters of it. These findings prove that Multi-step annealing methods is feasible to prepared high performance based photodetector.

perovskite photodetector annealing process

通讯

英语

CPCI-S ; EI

Basic Research Program of Shenzhen[JCYJ20170412154447469]

Engineering ; Optics ; Physics

Engineering, Electrical & Electronic ; Optics ; Physics, Applied

WOS:000452793000003

20182205245177

Absorption spectroscopy ; Annealing ; Film preparation ; Grain boundaries ; organic-inorganic materials ; Perovskite ; Photodetectors ; Photoluminescence spectroscopy ; Photonic devices ; Photons ; Phototransistors

Minerals:482.2 ; Heat Treatment Processes:537.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Atomic and Molecular Physics:931.3

Web of Science

1.Tianjin Univ, Coll Precis Instrument & Optoelect Engn, Tianjin 300072, Peoples R China
2.Tianjin Univ, Minist Educ, Key Lab Optoelect Informat Technol, Tianjin 300072, Peoples R China
3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Cao, Mingxuan,Zhang, Yating,Yu, Yu,et al. Improved perovskite phototransistor prepared using multi-step annealing method[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2018.