题名 | A 0.5V 46.2ppm/degrees C CMOS Voltage Reference Based on Compensated Delta VTH with Wide Temperature Range and High PSRR |
作者 | |
通讯作者 | He, Linjun |
发表日期 | 2018
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ISSN | 2472-467X
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会议录名称 | |
页码 | 66-69
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出版地 | 345 E 47TH ST, NEW YORK, NY 10017 USA
|
出版者 | |
摘要 | This paper presents a CMOS voltage reference (CVR) with low power, high power supply ripple rejection (PSRR), and small area operating in a wide temperature range. The proposed circuit contains only MOSFETs biased in subthreshold region and operates based on compensated Delta VTH of two different-type transistors. Implemented in a standard 0.181im CMOS process, the measured reference voltage of the proposed CVR is 344 mV with standard deviation of only 2.89 mV and achieves an average TC of 46.2ppm/degrees C over a wide temperature range from -40 degrees C to 125 degrees C without individual chip-by-chip trimming The measured PSRR is-70 dB,-51 dB and-52 dB at 10 Hz, 100 kHz and 10 MHz, respectively. The measured line sensitivity (LS) is 0.25%/V while consuming 15.65nW at 0.5V supply. The active area is 0.019mm(2). |
关键词 | |
学校署名 | 第一
; 通讯
|
语种 | 英语
|
相关链接 | [来源记录] |
收录类别 | |
资助项目 | NSTC[61604067]
; NSTC[JCYJ20160429191518358]
; NSTC[JCYJ20160530191008447]
|
WOS研究方向 | Engineering
|
WOS类目 | Engineering, Electrical & Electronic
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WOS记录号 | WOS:000458806300016
|
来源库 | Web of Science
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引用统计 |
被引频次[WOS]:4
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成果类型 | 会议论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/24667 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China 2.Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin, Peoples R China |
第一作者单位 | 电子与电气工程系 |
通讯作者单位 | 电子与电气工程系 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
He, Linjun,Zhan, Chenchang,Nan, Yang,et al. A 0.5V 46.2ppm/degrees C CMOS Voltage Reference Based on Compensated Delta VTH with Wide Temperature Range and High PSRR[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2018:66-69.
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条目包含的文件 | 条目无相关文件。 |
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