The enhancement mode AlGaN/GaN high electron mobility transistor based on charge storage

Wang, Hui1,2,3; Jiang, Lingli1,3; Wang, Ning1,3; Lin, Xinpeng1,3; Yu, Hongyu1,3

10.1109/ASICON.2017.8252562

2017

2162755X

978-1-5090-6626-1

2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON)

2017-October

662-665

25-28 Oct. 2017

Guiyang, China

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

In this paper, we sums up our resent progress on the enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) which are based on charge storage, including the split floating gates (FGs) HEMT and the one with oxide-SiN-oxide (ONO) gate dielectrics stack. For the FGs HEMT, the V-th variation with the polarization charge density, the density of two dimensional electron gas, the tunnel dielectric thickness, the blocking dielectric thickness, the length and isolating spacing of FGs are presented. The reliability of the FGs HEMT are also revealed. For the HEMT with ONO gate dielectrics stack, the E-mode is realized by negative charge storage within the SiN trap layer. The V-th variation with the programming condition and the thickness of the dielectrics are presented. Under proper programming voltage and time, the V-th can be increased to more than 2V Moreover, it is found that the breakdown voltage of such HEMT can be adjusted by varying the gate dielectric stacks.

HEMTs MODFETs Dielectrics Logic gates Aluminum oxide Aluminum gallium nitride Wide band gap semiconductors

第一 ; 通讯

英语

CPCI-S ; EI

Research of AlGaN HEMT MEMS sensor for work in extreme environment[JCYJ20170412153356899]

Engineering ; Telecommunications

Engineering, Electrical & Electronic ; Telecommunications

WOS:000426983400166

20181404981236

Aluminum gallium nitride ; Dielectric materials ; Electron gas ; Electron mobility ; Gallium nitride ; Gate dielectrics ; III-V semiconductors ; Silicon nitride ; Transistors ; Two dimensional electron gas ; Wide band gap semiconductors

Dielectric Materials:708.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2

Web of Science

1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China
2.Southeast Univ, Sch Elect Sci & Engn, 2 Sipailou Rd, Nanjing 210096, Jiangsu, Peoples R China
3.Shenzhen Key Laborary Third Generat Semicond, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China

Wang, Hui,Jiang, Lingli,Wang, Ning,et al. The enhancement mode AlGaN/GaN high electron mobility transistor based on charge storage[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2017:662-665.