南方科技大学知识苑(SUSTech KC): Characterization of trap behaviors in AlGaN/GaN MIS-HEMT via Transient Capacitance Measurement

题名	Characterization of trap behaviors in AlGaN/GaN MIS-HEMT via Transient Capacitance Measurement
作者	Dong, Bin 1; Lin, Jie1 ; Wang, Ning 1 ; Jiang, Ling-li1 ; Liu, Zong-dai 1; Cheng, Kai 2; Yu, Hong-yu1
通讯作者	Yu, Hong-yu
DOI	10.1109/ICSICT.2016.7998648
发表日期	2016
会议录名称	2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
页码	1053-1055
会议地点	Hangzhou, China
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
摘要	Transient capacitance measurement is used to study the trap behaviors in AlGaN/GaN MIS-HEMTs: 1) By measuring transfer characteristics before and after the pulse cycles applied on the gate electrode in AlGaN/GaN MIS-HEMTs, the threshold voltage (V-th) instability induced by the gate pulse is investigated; 2) The change of trap density before and after step-stress applied on drain electrode is also quantitatively analyzed.
学校署名	第一 ; 通讯
语种	英语
相关链接	[来源记录]
收录类别	CPCI-S ; EI
资助项目	Energy-efficient Si based GaN power devices Project[KQCX20140522151322946]
WOS研究方向	Engineering
WOS类目	Engineering, Electrical & Electronic
WOS记录号	WOS:000478951000296
EI入藏号	20173604123465
EI主题词	Aluminum gallium nitride ; Capacitance ; Capacitance measurement ; Electrodes ; Gallium nitride ; High electron mobility transistors ; III-V semiconductors ; Integrated circuits ; Refractory metal compounds ; Threshold voltage
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Organic Compounds:804.1 ; Inorganic Compounds:804.2 ; Electric Variables Measurements:942.2
来源库	Web of Science
引用统计	被引频次[WOS]：1
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/24872
专题	工学院_电子与电气工程系
作者单位	1.South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 2.Enkris Semicond Inc, Suzhou 215123, Peoples R China
第一作者单位	电子与电气工程系
通讯作者单位	电子与电气工程系
第一作者的第一单位	电子与电气工程系
推荐引用方式 GB/T 7714	Dong, Bin,Lin, Jie,Wang, Ning,et al. Characterization of trap behaviors in AlGaN/GaN MIS-HEMT via Transient Capacitance Measurement[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2016:1053-1055.