A novel enhance-mode AlGaN/GaN HEMT with split floating gates

Wang, Hui1,2; Jiang, Ling-Li1,2; Yu, Hong-Yu1,2

10.1109/ICSICT.2016.7998837

2016

978-1-4673-9720-9

2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)

53-56

25-28 Oct. 2016

Hangzhou, China

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

A novel enhance-mode (normally-off) AlGaN/GaN HEMT structure is proposed and demonstrated. Concretely, a few nanometers of tunnel dielectric as well as several split floating gates (FGs) are inserted beyond the conventional MIS structure of the normally-on counterpart. The FGs are applied to storage negative charges by means of tunneling effect, thereby converting the HEMT to an enhancement mode. The simulation results revealed that the V-th is able to be increased by adjusting the charge densities of FGs. More interestingly, the split FGs could observably reduce the probability of leakage comparing with the single large area FG structure, thus improving the Vth stability. Moreover, it should also be noteworthy mentioning that under the same gate length, the devices lifetime will also be impacted by the number and length of FGs.

HEMTs Logic gates Aluminum gallium nitride Wide band gap semiconductors Mathematical model Fingers Gallium nitride

第一 ; 通讯

英语

CPCI-S ; EI

"Key technology research of GaN on Si power devices" research fund[JSGG20140729145956266]

Engineering

Engineering, Electrical & Electronic

WOS:000478951000013

20173604123549

Aluminum gallium nitride ; Gallium nitride ; III-V semiconductors ; Integrated circuits

Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2

Web of Science

1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
2.Shenzhen Key Laborary Third Generat Semicond, Shenzhen 518055, Peoples R China

Wang, Hui,Jiang, Ling-Li,Yu, Hong-Yu. A novel enhance-mode AlGaN/GaN HEMT with split floating gates[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2016:53-56.