Study of a novel two mesas termination SiC Schottky barrier diode

Wang, Hui1,2; Jiang, Ling-Li1,2; Yu, Hong-Yu1,2

10.1109/ICSICT.2016.7998645

2016

978-1-4673-9720-9

2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)

1044-1046

25-28 Oct. 2016

Hangzhou, China

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

A SiC Schottky barrier diode (SBD) with a novel junction termination structure including two mesas and one P+ guard ring was proposed and demonstrated. Under reverse bias, charge will be attracted to the position of guard ring instead of concentrating at the edge of Schottky junction due to the existence of the first mesa. In addition, the second mesa will further cause the high electronic field expanding vertically, thus optimizing the electronic field region distribution. The dependence of peak electric field on mesa dimensions and guard ring are studied systematically. It was found that the peak electric field was greatly affected by the first mesa height and the guard ring concentration, while there was no obvious variation tendency between the peak electric field and the first mesa width as well as the guard ring depth. Moreover, the thickness of SiC epi-layer can be used adequately and the area of SiC epl-layer can also be reduced for fabricating the same level devices.

Silicon carbide Electric fields Junctions Schottky barriers Schottky diodes Electric potential

第一 ; 通讯

英语

CPCI-S ; EI

"Key technology research of GaN on Si power devices" research fund[JSGG20140729145956266]

Engineering

Engineering, Electrical & Electronic

WOS:000478951000293

20173604123462

Electric fields ; Integrated circuits ; Schottky barrier diodes ; Semiconductor junctions ; Silicon carbide

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2

Web of Science

1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
2.Shenzhen Key Laborary Third Generat Semicond, Shenzhen 518055, Peoples R China

Wang, Hui,Jiang, Ling-Li,Yu, Hong-Yu. Study of a novel two mesas termination SiC Schottky barrier diode[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2016:1044-1046.