A 0.035mm(2) 150mA Fast-Response Low-Dropout Regulator Based on Matching-Enhanced Error Amplifier and Multi-Threshold-Controlled Unity-Gain Buffer in 0.13-mu m CMOS

Zhan, Chenchang1; Ki, Wing-Hung2; Zheng, Jiawei2; Liu, Yonggen2

2016

0271-4302

2016 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)

2703-2706

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

A low-dropout regulator (LDR) using a matching-enhanced error amplifier (ME-EA) and a multi-threshold-controlled unity-gain buffer (MTC-UGB) is proposed in this work. With the majority of transistors being high-voltage devices of the process, the regulator tolerates a high input voltage range, which alleviates the reliability concern caused by low-voltage transistors. The ME-EA allows for tight line and load regulations. The MTC-UGB, by using low-voltage input transistors with locally regulated terminal voltage, enables large loop bandwidth and fast load transient responses without using compensation capacitor or large ESR of the output capacitor for compensation. Fabricated in a 0.13-mu m CMOS process, the proposed LDR occupies 0.035 mm(2) of active area and consumes 18 mu A of quiescent current and achieves 6 mV of voltage dip for 150 mA of load transient.

low-dropout regulator matching-enhanced error amplifier multi-threshold-controlled unity-gain buffer

第一 ; 通讯

英语

CPCI-S

Engineering

Engineering, Electrical & Electronic

WOS:000390094702215

Web of Science

1.Southern Univ Sci & Technol, Shenzhen, Peoples R China
2.Hong Kong Univ Sci & Technol, Hong Kong, Hong Kong, Peoples R China

Zhan, Chenchang,Ki, Wing-Hung,Zheng, Jiawei,et al. A 0.035mm(2) 150mA Fast-Response Low-Dropout Regulator Based on Matching-Enhanced Error Amplifier and Multi-Threshold-Controlled Unity-Gain Buffer in 0.13-mu m CMOS[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2016:2703-2706.