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题名

Low-voltage extended gate organic thin film transistors for ion sensing based on semi-conducting polymer electrodes

作者
通讯作者Roy, V. A. L.
DOI
发表日期
2016
ISSN
1996756X
会议录名称
卷号
9749
会议地点
San Francisco, CA, United states
出版地
1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者
摘要
We report a low-voltage organic field-effect transistor consisting of an extended gate sensory area to detect various ions in a solution. The device distinguishes various ions by the shift in threshold voltage and is sensitive to multiple ions with various concentrations. X-ray photoelectron spectroscopy measurements and the resistance changes at the sensor area prove that the ions are doped into the sensitive film at the sensor area. Because of the effect of doping, the conductivity of the semiconductor polymer film changes thus causing a threshold voltage shift.
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学校署名
其他
语种
英语
相关链接[来源记录]
收录类别
WOS研究方向
Optics ; Physics
WOS类目
Optics ; Physics, Applied
WOS记录号
WOS:000382989200015
EI入藏号
20163302712844
EI主题词
Conducting polymers ; Ions ; Polymer films ; Semiconducting films ; Semiconductor doping ; Sensors ; Thin film circuits ; Thin film transistors ; Thin films ; Threshold voltage ; X ray photoelectron spectroscopy
EI分类号
Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Polymeric Materials:815.1
来源库
Web of Science
引用统计
被引频次[WOS]:0
成果类型会议论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/24900
专题理学院_化学系
作者单位
1.City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon Tong, Hong Kong, Peoples R China
2.City Univ Hong Kong, State Key Lab Millimetter Waves, Kowloon Tong, Hong Kong, Peoples R China
3.South Univ Sci & Technol China, Dept Chem, Shenzhen 518055, Guangdong, Peoples R China
推荐引用方式
GB/T 7714
Ji, Shiliang,Sun, Qi-Jun,Venkatesh, Shishir,et al. Low-voltage extended gate organic thin film transistors for ion sensing based on semi-conducting polymer electrodes[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2016.
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