Oxide-Based Analog Synapse: Physical Modeling, Experimental Characterization, and Optimization

Gao, Bin1,2; Wu, Huaqiang1,2; Kang, Jinfeng3; Yu, Hongyu4; Qian, He1,2; IEEE

10.1109/IEDM.2016.7838367

2016

0163-1918

978-1-5090-3903-6

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)

0

7.3.1-7.3.4

3-7 Dec. 2016

San Francisco, CA, United states

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

Analog switching in oxide synaptic device has been recently proposed as an important technology for realizing hardware neural network with online training ability. This paper develops a new physical model to quantify the analog weight modulation behaviors in the oxide-based analog synapse. The analog SET, RESET, and retention loss processes are simulated and verified by the experimental data measured from the fabricated HfOx, based synapse. Based on the simulation results, key material parameters are captured, and optimization guidelines are provided.

Switches Resistance Electrical resistance measurement Hafnium compounds Training Mathematical model Ions

其他

英语

CPCI-S ; EI

NSFC[61404006]

Engineering

Engineering, Electrical & Electronic

WOS:000399108800042

20171003420867

Behavioral research ; Electron devices ; Hafnium compounds

Information Theory and Signal Processing:716.1 ; Social Sciences:971

Web of Science

1.Tsinghua Univ, Inst Microelect, Beijing, Peoples R China
2.Tsinghua Univ, CBICR, Beijing, Peoples R China
3.Peking Univ, Inst Microelect, Beijing, Peoples R China
4.Southern Univ Sci & Technol, Shenzhen, Peoples R China

Gao, Bin,Wu, Huaqiang,Kang, Jinfeng,et al. Oxide-Based Analog Synapse: Physical Modeling, Experimental Characterization, and Optimization[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2016:7.3.1-7.3.4.