An Ultra-Low Power CMOS Subthreshold Voltage Reference without Requiring Resistors or BJTs

Liu, Yang1; Zhan, Chenchang1; Wang, Lidan1,2

10.1109/APCCAS.2016.7804066

2016

978-1-5090-1571-9

2016 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS)

688-690

25-28 Oct. 2016

Jeju, Korea, Republic of

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

This paper presents a novel ultra-low power voltage reference operational from supply voltage down to less than 0.9V. In the proposed reference circuit, the PTAT voltage is generated by feeding the leakage current of a zero-Vgs NMOS transistor to two diode-connected NMOS transistors, both of which are in subthreshold region; while the CTAT voltage is created by using the body-diodes of another NMOS transistor. Consequently, low-voltage, low-power operation can be achieved without requiring resistors or BJTs, hence with small chip area consumption. The proposed circuit is designed in a 0.18-mu m process. Simulation results show that it is capable of providing an 808mV reference voltage with 10ppm/degrees C from-30 degrees C - 125 degrees C even with only 900mV supply voltage. Moreover, the typical power consumption is only 10nW.

ultra-low power voltage reference high temperature coefficient

第一 ; 通讯

英语

CPCI-S ; EI

SZSTI[ICYJ20160429191518358]

Engineering

Engineering, Electrical & Electronic

WOS:000392651200184

20170603321639

CMOS integrated circuits ; Resistors

Semiconductor Devices and Integrated Circuits:714.2 ; Electric Variables Measurements:942.2

Web of Science

1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen, Peoples R China
2.Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin, Peoples R China

Liu, Yang,Zhan, Chenchang,Wang, Lidan. An Ultra-Low Power CMOS Subthreshold Voltage Reference without Requiring Resistors or BJTs[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2016:688-690.