Line Defect Detection on 2D materials with Micro Four-Point Probe Measurement

Gong, Xu1; Wang, Fei1,2; IEEE

10.1109/NEMS.2015.7147498

2015

2474-3747

2474-3755

2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)

589-592

Xi'an, China

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

This paper presents a measurement scheme which can be used to detect the line defects in two dimensional (2D) materials such as graphene. With micro four point probe measurement, the sheet resistances of the material can be mapped in two directions. Therefore, the line defects with insulation boundaries can be illustrated by calculating the resistance ratio RA/RB. We have demonstrated the simulations on 2D material with single defect and double defects with different positions and angles. The size effect of the defects has also been studied. The presented method is also promising for material characterization and defect estimation on film materials.

micro four point probe 2D material sheet resistance boudary defect

第一 ; 通讯

英语

CPCI-S ; EI

Science & Technology - Other Topics ; Instruments & Instrumentation

Nanoscience & Nanotechnology ; Instruments & Instrumentation

WOS:000380505700140

20153401190172

Probes ; Sheet resistance

Electric Variables Measurements:942.2 ; Materials Science:951

Web of Science

1.South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen, Peoples R China
2.Shenzhen Key Lab 3rd Generat Semicond Devices, Shenzhen, Peoples R China

Gong, Xu,Wang, Fei,IEEE. Line Defect Detection on 2D materials with Micro Four-Point Probe Measurement[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2015:589-592.