Overshoot Stress Impact on HfO2 High-kappa Layer Dynamic SILC

Wan, Guangxing1,2; Duan, Tianli1; Zhang, Shuxiang1,2; Jiang, Lingli1; Tang, Bo2; Zhao, Chao2; Zhu, Huilong2; Yu, HongYu1

2015

2162-7541

PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON)

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

Overshoot stress (mimicking the actual IC operating condition) in dynamic stress induced leakage increase (D-SILC) on ultra-thin HfO2 (EOT similar to 0.8 nm) high-layer are investigated, which reveals that overshoot is of great concern to high-layer leakage current. The D-SILC is correlated with traps generation which is dependent on stress input and release. A degradation model based on the oxygen vacancies is provided to understand the above mentioned phenomena.

第一 ; 通讯

英语

CPCI-S

Computer Science ; Engineering ; Telecommunications

Computer Science, Hardware & Architecture ; Engineering, Electrical & Electronic ; Telecommunications

WOS:000398709000069

Web of Science

1.South Univ Sci & Technol China, Shenzhen 518055, Peoples R China
2.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

Wan, Guangxing,Duan, Tianli,Zhang, Shuxiang,et al. Overshoot Stress Impact on HfO2 High-kappa Layer Dynamic SILC[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2015.