中文版 | English
题名

RRAM based Synaptic Devices for Neuromorphic Visual Systems

作者
通讯作者Kang, J. F.
DOI
发表日期
2015
会议录名称
卷号
2015-September
页码
1219-1222
会议地点
Singapore, Singapore
出版地
345 E 47TH ST, NEW YORK, NY 10017 USA
出版者
摘要
Neuromorphic computing is an attractive computation paradigm with the features of massive parallelism, adaptivity to the complex input information, and tolerance to errors. As one of the most crucial components in a neuromorphic system, the electronic synapse requires high device integration density and low-energy consumption. Oxide-based resistive switching devices (RRAM) have emerged as the leading candidate to realize the synapse functions due to the extra-low energy loss per spike. This work will address the design and optimization of oxide-based RRAM synaptic devices and the impacts of the synaptic devices parameters on the performance of neuromorphic visual system. Possible solutions are also provided to suppress the intrinsic variation of the oxide-RRAM based synaptic devices to achieve high recognition accuracy and efficiency of neuromorphic visual systems
关键词
学校署名
其他
语种
英语
相关链接[来源记录]
收录类别
WOS研究方向
Engineering
WOS类目
Engineering, Electrical & Electronic
WOS记录号
WOS:000380506600256
EI入藏号
20160501876956
EI主题词
Energy dissipation ; Energy utilization ; RRAM
EI分类号
Energy Utilization:525.3 ; Energy Losses (industrial and residential):525.4
来源库
Web of Science
引用统计
被引频次[WOS]:8
成果类型会议论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/25003
专题南方科技大学
工学院_深港微电子学院
作者单位
1.Peking Univ, Inst Microelect, Beijing, Peoples R China
2.South Univ Sci & Technol China, Dept EEE, Shenzhen 518055, Peoples R China
3.Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ USA
4.Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
推荐引用方式
GB/T 7714
Kang, J. F.,Gao, B.,Huang, P.,et al. RRAM based Synaptic Devices for Neuromorphic Visual Systems[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2015:1219-1222.
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