Plasma treatment of p-GaN/n-ZnO light-emitting diodes

Leung, Yu Hang1; Ng, Alan M. C.1,2; Djurisic, Aleksandra B.1; Chan, Wai Kin3; Fong, Patrick W. K.4; Lui, Hsien Fei4; Surya, Charles C.4

10.1117/12.2042305

2014

1996756X

1996-756X

OXIDE-BASED MATERIALS AND DEVICES V

8987

San Francisco, CA, United states

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

SPIE-INT SOC OPTICAL ENGINEERING

Zinc oxide (ZnO) is a material of great interest for short-wavelength optoelectronic applications due to its wide band gap (3.37 eV) and high exciton binding energy (60 meV). Due to the difficulty in stable p-type doping of ZnO, other p-type materials such as gallium nitride (GaN) have been used to form heterojunctions with ZnO. p-GaN/n-ZnO heterojunction devices, in particular light-emitting diodes (LED) have been extensively studied. There was a huge variety of electronic properties and emission colors on the reported devices. It is due to the different energy alignment at the interface caused by different properties of the GaN layer and ZnO counterpart in the junction. Attempts have been made on modifying the heterojunction by various methods, such as introducing a dielectric interlayer and post-growth surface treatment, and changing the growth methods of ZnO. In this study, heterojunction LED devices with p-GaN and ZnO nanorods array are demonstrated. The ZnO nanorods were grown by a solution method. The ZnO nanorods were exposed to different kinds of plasma treatments (such as nitrogen and oxygen) after the growth. It was found that the treatment could cause significant change on the optical properties of the ZnO nanorods, as well as the electronic properties and light emissions of the resultant LED devices.

ZnO nanorods plasma treatment light-emitting diodes

其他

英语

CPCI-S ; EI

Optics ; Physics

Optics ; Physics, Applied

WOS:000337582100049

20142417801955

Binding energy ; Diodes ; Electronic properties ; Energy gap ; Gallium nitride ; Heterojunctions ; II-VI semiconductors ; III-V semiconductors ; Light emitting diodes ; Nanorods ; Nitrogen plasma ; Optical properties ; Plasma applications ; Semiconductor quantum wells ; Surface treatment ; Zinc oxide

Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Inorganic Compounds:804.2 ; Plasma Physics:932.3 ; Solid State Physics:933

Web of Science

1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.S Univ Sci & Technol China, Nanostruct Inst Energy & Environm Res, Div Phys Sci, Shenzhen, Peoples R China
3.Univ Hong Kong, Dept Chem, Hong Kong, Peoples R China
4.Hong Kong Polytechn Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R China

Leung, Yu Hang,Ng, Alan M. C.,Djurisic, Aleksandra B.,et al. Plasma treatment of p-GaN/n-ZnO light-emitting diodes[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2014.