Influence of Native Defects on Photocatalytic Activity of ZnO

Liu, F. Z.1; Guo, M. Y.1; Leung, Y. H.1; Ng, A. M. C.2; Djurisic, A. B.1; Chan, W. K.3

10.1063/1.4848292

2013

0094-243X

PHYSICS OF SEMICONDUCTORS

1566

75-+

Zurich, Switzerland

2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA

AMER INST PHYSICS

We studied the effect of native defects and photocatalytic activity of ZnO. Optical properties and dye degradation experiments have been performed on eight different ZnO nanoparticles. Photoluminescence (PL) spectra were measured for characterization of optical properties. To measure the photocatalytic activity, suspensions of ZnO nanoparticles in methyl orange (MO) solution were placed under UV illumination, and absorption measurements were performed after different illumination time. The experiments show a general tendency that ZnO nanoparticles with higher overall PL intensity exhibit better photocatalytic performance in degradation of MO, which suggests that native defects have an influence on photocatalytic activities of ZnO nanoparticles.

ZnO photocatalysis

其他

英语

CPCI-S ; EI

Engineering ; Physics

Engineering, Electrical & Electronic ; Physics, Applied

WOS:000331793000037

20143718157235

Azo dyes ; Defects ; II-VI semiconductors ; Metal nanoparticles ; Optical properties ; Photocatalysis ; Photocatalytic activity ; Wide band gap semiconductors ; Zinc oxide ; ZnO nanoparticles

Compound Semiconducting Materials:712.1.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Chemical Agents and Basic Industrial Chemicals:803 ; Inorganic Compounds:804.2 ; Materials Science:951

Web of Science

1.Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China
2.South Univ Sci & Technol, Nanostructure Inst Energy & Environm Res, Div Phys Sci, Shenzhen, Peoples R China
3.Univ Hong Kong, Dept Chem, Hong Kong, Peoples R China

Liu, F. Z.,Guo, M. Y.,Leung, Y. H.,et al. Influence of Native Defects on Photocatalytic Activity of ZnO[C]. 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA:AMER INST PHYSICS,2013:75-+.