Influence of the metallic electrodes on the contact resistance of the ink-jet printed In-Ga-Zn oxide TFTs

Han, Y.1; Wang, Y.2; Dai, H. T.1; Wang, S. G.1; Zhao, J. L.1; Sun, X. W.3

10.1117/12.2002885

2013

0277-786X

1996-756X

OXIDE-BASED MATERIALS AND DEVICES IV

8626

San Francisco, CA, United states

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

SPIE-INT SOC OPTICAL ENGINEERING

The influence of the metallic electrode materials on the contact resistance of the ink-jet printed In-Ga-Zn oxide (IGZO) thin film transistors (TFTs) is investigated in this paper. Various electrodes, including Al, Ti/Au, ITO and Au were examined based on the inverted staggered (bottom gate top contact) IGZO TFTs. Without additional annealing, the contact resistance increased with the increase of the work function of the electrode, which is Al < Ti/Au < ITO < Au. However, the contact resistance behavior changed drastically for different electrodes under different annealing temperature from 200 to 500 degrees C. The different behavior of the electrodes upon annealing was regarded to the contact modes changed between ohmic and Schottky contact. The finding provides a clue for electrode selection for the ink-jet printed IGZO TFTs to minimize the contact resistance and optimize the device performance according to the process conditions.

In-Ga-Zn oxide thin film transistors contact resistance

其他

英语

CPCI-S ; EI

National Natural Science Foundation of China (NSFC)[61177014]

Materials Science ; Optics

Materials Science, Multidisciplinary ; Optics

WOS:000325342500037

20132216383547

Annealing ; Contact resistance ; Electrodes ; Gallium alloys ; Gallium compounds ; Indium alloys ; Ink ; Ink jet printers ; Semiconducting indium compounds ; Ternary alloys ; Thin film circuits ; Thin films ; Zinc alloys

Heat Treatment Processes:537.1 ; Zinc and Alloys:546.3 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Printing Equipment:745.1.1 ; Chemical Products Generally:804

Web of Science

1.Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China
2.Singapore Univ Technol & Design, Pillar Engn Prod Dev, Singapore 138682, Singapore
3.South Univ Sci & Technol, Dept Elect & Comp Engn, Shenzhen, Guangdong, Peoples R China

Han, Y.,Wang, Y.,Dai, H. T.,et al. Influence of the metallic electrodes on the contact resistance of the ink-jet printed In-Ga-Zn oxide TFTs[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2013.