A hybrid CMOS inverter made of ink-jet printed n-channel inorganic and p-channel organic thin film transistors

Nan, X. L.1; Wang, Y.2; Dai, H. T.1; Wang, S. G.1; Zhao, J. L.1; Sun, X. W.3

10.1117/12.2002894

2013

0277-786X

OXIDE-BASED MATERIALS AND DEVICES IV

8626

San Francisco, CA, United states

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

SPIE-INT SOC OPTICAL ENGINEERING

In this paper, a hybrid CMOS inverter employing In-Ga-Zn oxide (IGZO) (inorganic, n-channel) and P3HT (organic, p-channel) thin film transistors (TFTs) is reported. Both inorganic and organic TFTs are fabricated by ink-jet printing technology. The field effect mobility of p and n channel TFTs are 0.0038 and 0.27 cm(2)/V s, respectively. The inverter exhibited an obvious inverter response for switching between logic '1' and logic '0', and yielded a high gain of 14 at V-DD = 30 V. With the combining advantages of oxide semiconductor (n-type, high mobility) and organic (commonly p-type), it is promising to construct powerful functional CMOS circuits, such as ring oscillator and shift registers.

CMOS inverter ink-jet printing thin film transistors

其他

英语

CPCI-S ; EI

National Natural Science Foundation of China (NSFC)[61177014]

Materials Science ; Optics

Materials Science, Multidisciplinary ; Optics

WOS:000325342500038

20132216383548

Chemical sensors ; CMOS integrated circuits ; Field effect transistors ; Gallium alloys ; Gallium compounds ; Ink ; Ink jet printers ; Oscillators (electronic) ; Oxide semiconductors ; Semiconducting indium compounds ; Shift registers ; Thin film circuits ; Thin film transistors ; Thin films ; Zinc alloys

Zinc and Alloys:546.3 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Compound Semiconducting Materials:712.1.2 ; Oscillators:713.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Computer Circuits:721.3 ; Printing:745.1 ; Printing Equipment:745.1.1 ; Chemistry:801 ; Chemical Products Generally:804

Web of Science

1.Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China
2.Singapore Univ Technol & Design, Pillar Engn Prod Dev, Singapore 138682, Singapore
3.South Univ Sci & Technol, Dept Elect & Comp Engn, Shenzhen, Guangdong, Peoples R China

Nan, X. L.,Wang, Y.,Dai, H. T.,et al. A hybrid CMOS inverter made of ink-jet printed n-channel inorganic and p-channel organic thin film transistors[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2013.