南方科技大学知识苑(SUSTech KC): NiO as Hole Transport Layers for All-inorganic Quantum Dot LEDs

题名	NiO as Hole Transport Layers for All-inorganic Quantum Dot LEDs
作者	Tang, L. Y.1; Zhang, X. L.1; Dai, H. T.1; Zhao, J. L.1,3; Wang, S. G.1; Sun, X. W.2
通讯作者	Dai, H. T.
DOI	10.1117/12.2002896
发表日期	2013
ISSN	0277-786X
会议录名称	LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVII
卷号	8641
会议地点	San Francisco, CA, United states
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
摘要	Quantum dot light-emitting diodes (QD-LEDs) have recently attracted much attention due to its highly saturated emission color and the capability of tuning the emission color by means of engineering its size. In this letter, an allinorganic light-emitting diode based on colloidal core/shell CdS/ZnS nanocrystal quantum dots (QDs) emissive layer sandwiched between p-type NiO and n-type ZnO is reported. NiO and ZnO layers are deposited by means of the low-cost spin coating technique. The device showed a rectification behavior and QD light emission with the electroluminescent emissions at 605nm.
关键词	Quantum dot light-emitting diodes all-inorganic NiO film sol-gel method
学校署名	其他
语种	英语
相关链接	[来源记录]
收录类别	CPCI-S ; EI
资助项目	Shanghai Pujiang Program[12PJ1431000]
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Optics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Optics
WOS记录号	WOS:000325366600008
EI入藏号	20132316390856
EI主题词	Cadmium sulfide ; Diodes ; II-VI semiconductors ; Light emitting diodes ; Nanocrystals ; Nickel oxide ; Quantum chemistry ; Semiconductor quantum dots ; Sol-gel process ; Sol-gels ; Sols ; Zinc oxide
EI分类号	Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Glass:812.3
来源库	Web of Science
引用统计	被引频次[WOS]：2
成果类型	会议论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/25050
专题	工学院_电子与电气工程系
作者单位	1.Tianjin Univ, Sch Sci, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China 2.South Univ Sci & Technol, Dept Elect & Comp Engn, Shenzhen, Peoples R China 3.Shanghai Juntech Co Ltd, Shanghai 201815, Peoples R China
推荐引用方式 GB/T 7714	Tang, L. Y.,Zhang, X. L.,Dai, H. T.,et al. NiO as Hole Transport Layers for All-inorganic Quantum Dot LEDs[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2013.