A Novel Self-Selection Bipolar RRAM Cell with Ultra-Low Operation Currents for Cross-Point Application

Gao, Bin1; Kang, Jinfeng1; Chen, Bing1; Huang, Peng1; Ma, Long1; Zhang, Feifei1; Liu, Lifeng1; Liu, Xiaoyan1; Xuan Anh Tran2; Yu, Hongyu3

10.1109/ICSICT.2012.6467645

2012

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012)

500-502

Xi'an, China

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

A self-selection and self-compliance bipolar RRAM cell based on TiN/HfOx/n(+)-Si structure is proposed for the CMOS compatible and ultra low power cross-point array application. Electrical forming scheme is important to achieved desired resistive switching performance due to the existing of interface sub-oxide layer. For RRAM cell, ultra-low RESET current < 0.5 mu A and good reliability (retention @ 150 degrees C > 10(4) seconds and endurance > 10(4) cycles) are demonstrated after optimization by material-oriented methodology. The write and read operation could be performed correctly without additional selector.

其他

英语

CPCI-S ; EI

973 and NSFC Program[2011CBA00600]

Engineering ; Physics

Engineering, Electrical & Electronic ; Physics, Applied

WOS:000319824700140

20131116120205

Titanium nitride

Inorganic Compounds:804.2

Web of Science

1.Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
2.Nanyang Technol Univ, Sch EEE, Singapore, Singapore
3.South Univ Sci & Technol China, Shenzhen, Peoples R China

Gao, Bin,Kang, Jinfeng,Chen, Bing,et al. A Novel Self-Selection Bipolar RRAM Cell with Ultra-Low Operation Currents for Cross-Point Application[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2012:500-502.