题名 | Evidence for Magnetic Skyrmions at the Interface of Ferromagnet/Topological-Insulator Heterostructures |
作者 | |
通讯作者 | Xi, Bin; He, Hongtao; Li, Bin; Wang, Gan |
发表日期 | 2019-08-23
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DOI | |
发表期刊 | |
ISSN | 1530-6984
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EISSN | 1530-6992
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卷号 | 19期号:9页码:6144-6151 |
摘要 | The heterostructures of the ferromagnet (Cr2Te3) and topological insulator (Bi2Te3) have been grown by molecular beam epitaxy. The topological Hall effect as evidence of the existence of magnetic skyrmions has been observed in the samples in which Cr2Te3 was grown on top of Bi2Te3. Detailed structural characterizations have unambiguously revealed the presence of intercalated Bi bilayer nanosheets right at the interface of those samples. The atomistic spin-dynamics simulations have further confirmed the existence of magnetic skyrmions in such systems. The heterostructures of ferromagnet and topological insulator that host magnetic skyrmions may provide an important building block for next generation of spintronics devices. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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重要成果 | NI期刊
|
学校署名 | 第一
; 通讯
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资助项目 | Technology and Innovation Commission of Shenzhen Municipality[ZDSYS20170303165926217]
; Technology and Innovation Commission of Shenzhen Municipality[JCYJ20170412152334605]
; Technology and Innovation Commission of Shenzhen Municipality[KQJSCX20170727090712763]
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WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
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WOS类目 | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
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WOS记录号 | WOS:000486361900041
|
出版者 | |
EI入藏号 | 20194107509035
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EI主题词 | Chromium Compounds
; Electric Insulators
; Ferromagnetic Materials
; Ferromagnetism
; Hall Effect
; Heterojunctions
; Magnets
; Molecular Beam Epitaxy
; Nanosheets
; Spin Dynamics
; Superconducting Materials
; Tellurium Compounds
; Topological Insulators
; Topology
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EI分类号 | Electricity: Basic Concepts And Phenomena:701.1
; Superconducting Materials:708.3
; Magnetic Materials:708.4
; Semiconductor Devices And Integrated Circuits:714.2
; Nanotechnology:761
; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4
; Atomic And Molecular Physics:931.3
; Solid State Physics:933
|
ESI学科分类 | MATERIALS SCIENCE
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来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:73
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/25261 |
专题 | 量子科学与工程研究院 理学院_物理系 公共分析测试中心 |
作者单位 | 1.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 3.Natl Univ Singapore, Dept Phys, 2 Sci Dr 3, Singapore 117551, Singapore 4.Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China 5.Southern Univ Sci & Technol, Mat Characterizat & Preparat Ctr, Shenzhen 518055, Peoples R China 6.Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China |
第一作者单位 | 量子科学与工程研究院; 物理系 |
通讯作者单位 | 量子科学与工程研究院; 物理系 |
第一作者的第一单位 | 量子科学与工程研究院 |
推荐引用方式 GB/T 7714 |
Chen, Junshu,Wang, Linjing,Zhang, Meng,et al. Evidence for Magnetic Skyrmions at the Interface of Ferromagnet/Topological-Insulator Heterostructures[J]. NANO LETTERS,2019,19(9):6144-6151.
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APA |
Chen, Junshu.,Wang, Linjing.,Zhang, Meng.,Zhou, Liang.,Zhang, Runnan.,...&Wang, Gan.(2019).Evidence for Magnetic Skyrmions at the Interface of Ferromagnet/Topological-Insulator Heterostructures.NANO LETTERS,19(9),6144-6151.
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MLA |
Chen, Junshu,et al."Evidence for Magnetic Skyrmions at the Interface of Ferromagnet/Topological-Insulator Heterostructures".NANO LETTERS 19.9(2019):6144-6151.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Chen-2019-Evidence f(8825KB) | -- | -- | 限制开放 | -- |
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