Tuning Effective Spin Hall Angles via Oxygen Vacancies in Multiferroic BiFeO3-Based Heterostructures

Liu, Pengfei1; Miao, Jun1; Liu, Qi1; Xu, Zedong2; Ren, Zengyao1; Meng, Kangkang1; Wu, Yong1; Chen, Jikun1; Xu, Xiaoguang1; Jiang, Yong1

2019-08-14

10.1002/aelm.201900435

Advanced Electronic Materials   影响因子和分区

2199-160X

Recently, magnetization switching driven by spin-orbit torque (SOT) has been intensely studied. However, it is still a challenge to effectively control the spin Hall angle (SHA) and critical current density for SOT switching. With the help of multiferroic BiFeO3 (BFO) thin films, a method to adjust SHA and the switching current is proposed. The BFO-based heterostructures with opposite spontaneous polarization fields show huge changes in both perpendicular magnetic anisotropy and SOT-induced magnetization switching. The variation of the effective SHAs for the heterostructures with opposite polarizations is estimated to be 272%, which can be attributed to the distribution of oxygen vacancies inside the BFO films. The possible applications of these structures in memory and reconfigurable logic devices are also demonstrated.

BFO-based heterostructures oxygen vacancies polarization field spin logic devices spin-orbit torques

SCI ; EI

英语

其他

National Science Foundation of China[51731003] ; National Science Foundation of China[11574027] ; National Science Foundation of China[51671019] ; National Science Foundation of China[51602022] ; National Science Foundation of China[61674013] ; National Science Foundation of China[51602025]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000480935600001

WILEY

20193407333170

Bismuth compounds ; Iron compounds ; Logic devices ; Magnetic anisotropy ; Magnetization ; Polarization ; Reconfigurable hardware ; Switching

Magnetism: Basic Concepts and Phenomena:701.2 ; Logic Elements:721.2 ; Computer Circuits:721.3 ; Crystalline Solids:933.1

Web of Science

1.Univ Sci & Technol Beijing, Beijing Adv Innovat Ctr Mat Genome Engn, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China

Liu, Pengfei,Miao, Jun,Liu, Qi,et al. Tuning Effective Spin Hall Angles via Oxygen Vacancies in Multiferroic BiFeO3-Based Heterostructures[J]. Advanced Electronic Materials,2019,5(10).

Liu, Pengfei.,Miao, Jun.,Liu, Qi.,Xu, Zedong.,Ren, Zengyao.,...&Jiang, Yong.(2019).Tuning Effective Spin Hall Angles via Oxygen Vacancies in Multiferroic BiFeO3-Based Heterostructures.Advanced Electronic Materials,5(10).

Liu, Pengfei,et al."Tuning Effective Spin Hall Angles via Oxygen Vacancies in Multiferroic BiFeO3-Based Heterostructures".Advanced Electronic Materials 5.10(2019).