Impact of OFF-state Gate Bias on Dynamic R-ON p-GaN Gate HEMT

In this work, the impacts of OFF-state gate bias (V-GS,V-OFF) on the dynamic on-resistance (R-ON) are investigated in the commercial Schottky-type p-GaN gate high-electron-mobility transistor (HEMT). A more negative V-GS,V-OFF could aggravate the dynamic R-ON degradation, especially when switching with a large OFF-state drain bias. In addition, the dependence of dynamic R-ON on the high drain bias also varies with V-GS(,OFF). The underlying mechanism is suggested to be associated with the generation and movement of holes, which are both strongly affected by V-GS(,OFF).