Reversible modulation of metal-insulator transition in VO2 via chemically induced oxygen migration

Han，Kun1,2; Wang，Hanyu3; Wu，Liang4,5; Cao，Yu6; Qi，Dong Chen7; Li，Changjian8; Huang，Zhen1; Li，Xiao3; Renshaw Wang，X.2,9

2021-09-27

10.1063/5.0058989

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

Metal-insulator transition (MIT), an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the dramatic change in resistivity. Here, we demonstrate a reversible control of MIT in VO films via oxygen stoichiometry engineering. By facilely depositing and dissolving a water-soluble yet oxygen-active SrAlO capping layer atop VO at room temperature, oxygen ions can reversibly migrate between VO and SrAlO, resulting in a gradual suppression and a complete recovery of MIT in VO. The migration of the oxygen ions is evidenced in a combination of transport measurement, structural characterization, and first-principles calculations. This approach of chemically induced oxygen migration using a water-dissolvable adjacent layer could be useful for advanced electronic and iontronic devices and studying oxygen stoichiometry effects on the MIT.

SCI ; EI

英语

NI期刊

其他

Tier 2 from Singapore Ministry of Education[MOE-T2EP50120-0006] ; Tier 3 from Singapore Ministry of Education[MOE2018-T3-1-002] ; Singapore National Research Foundation (NRF) under the competitive Research Programs (CRP Grant)[NRF-CRP21-2018-0003] ; Agency for Science, Technology and Research (A*STAR) under its AME IRG grant[A20E5c0094] ; Foshan (Southern China) Institute for New Materials[2021AYF25014] ; National Natural Science Foundation of China[12074001,11904173] ; Australian Research Council[FT160100207]

Physics

Physics, Applied

WOS:000751392400009

AIP Publishing

20214010969163

Aluminum compounds ; Calculations ; Kinetic energy ; Kinetics ; Metal insulator boundaries ; Metal insulator transition ; Oxygen ; Semiconductor insulator boundaries ; Stoichiometry

Fluid Flow, General:631.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Physical Chemistry:801.4 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Mathematics:921 ; Classical Physics; Quantum Theory; Relativity:931

PHYSICS

2-s2.0-85115918678

Scopus

1.Information Materials and Intelligent Sensing Laboratory of Anhui Province,Institutes of Physical Science and Information Technology,Anhui University,Hefei,230601,China
2.Division of Physics and Applied Physics,School of Physical and Mathematical Sciences,Nanyang Technological University,Singapore,21 Nanyang Link,637371,Singapore
3.Center for Quantum Transport and Thermal Energy Science (CQTES),School of Physics and Technology,Nanjing Normal University,Nanjing,210023,China
4.Faculty of Material Science and Engineering,Kunming University of Science and Technology,Kunming,Yunnan,650093,China
5.Foshan (Southern China) Institute for New Materials,Foshan,528247,China
6.Department of Electrical and Computer Engineering,National University of Singapore,Singapore,4 Engineering Drive 3,117583,Singapore
7.Centre for Materials Science,School of Chemistry and Physics,Queensland University of Technology,Brisbane,4001,Australia
8.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
9.School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore,50 Nanyang Ave.,639798,Singapore

Han，Kun,Wang，Hanyu,Wu，Liang,et al. Reversible modulation of metal-insulator transition in VO2 via chemically induced oxygen migration[J]. APPLIED PHYSICS LETTERS,2021,119(13):1ENG.

Han，Kun.,Wang，Hanyu.,Wu，Liang.,Cao，Yu.,Qi，Dong Chen.,...&Renshaw Wang，X..(2021).Reversible modulation of metal-insulator transition in VO2 via chemically induced oxygen migration.APPLIED PHYSICS LETTERS,119(13),1ENG.

Han，Kun,et al."Reversible modulation of metal-insulator transition in VO2 via chemically induced oxygen migration".APPLIED PHYSICS LETTERS 119.13(2021):1ENG.