Antisymmetric magnetoresistance in Fe3 GeTe2 nanodevices of inhomogeneous thickness

Niu，Wei1; Cao，Zhi1; Wang，Yile1; Wu，Zhenqi1; Zhang，Xiaoqian2,3; Han，Weibo1; Wei，Lujun1; Wang，Lixia1; Xu，Yongbing1,2; Zou，Youming4; He，Liang2; Pu，Yong1

2021-09-15

10.1103/PhysRevB.104.125429

Physical Review B   影响因子和分区

2469-9950

2469-9969

With the emergence of the van der Waals two-dimensional (2D) ferromagnetic materials, Fe3GeTe2 (FGT) with a high Curie temperature (TC) and the perpendicular magnetic anisotropy (PMA) provides a rich platform for the next generation spintronic devices. Up to now, in most 2D magnets-based devices, the easiest and the most convenient way to obtain thin flakes is still the mechanical exfoliation method. However, samples with thickness variation occur inevitably during this process, which are either ignored due to the thickness-inhomogeneity-induced complicated phenomena or far from been fully reached. Herein, unlike conventional symmetric magnetoresistance with respect to the magnetic field observed in thickness-uniform FGT flakes, we demonstrate a hitherto rarely observed antisymmetric magnetoresistance in thickness-inhomogeneous nanodevices. Since the TC and coercive field (HC) of FGT are thickness dependent, thickness variations in FGT flake lead to different regions with distinct HCs. Together with the thickness variations-induced differences in HCs and the PMA, an eddy current generates in the proximity of the thickness boundary during the magnetic switching process. This eddy current perturbs the longitudinal resistance and results in the unexpected antisymmetry. Our work provides a new understanding and the device application in thickness-variation 2D ferromagnetic materials, which are more experimentally common but have been neglected thus far.

SCI ; EI

英语

其他

National Natural Science Foundation of China[61874060,11904174,61911530220,"U1932159"] ; Natural Science Foundation of Jiangsu Province["BK20190729","BK20181388","19KJA180007"] ; NUPTSF["NY219024","NY220203","NY217118"] ; Natural Science Foundation of the Jiangsu Higher Education Institutions of China[19KJB510047]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000704426300010

AMER PHYSICAL SOC

20213910957201

Eddy currents ; Ferromagnetism ; Germanium alloys ; Germanium compounds ; Iron compounds ; Magnetic anisotropy ; Magnetoresistance ; Nanostructured materials ; Tellurium compounds ; Van der Waals forces

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Magnetic Materials:708.4 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Atomic and Molecular Physics:931.3 ; Crystalline Solids:933.1

PHYSICS

2-s2.0-85115769171

Scopus

1.New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science,Nanjing University of Posts and Telecommunications,Nanjing,210023,China
2.National Laboratory of Solid State Microstructures,Collaborative Innovation Center of Advanced Microstructures,School of Electronic Science and Engineering,Nanjing University,Nanjing,210023,China
3.Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions,High Magnetic Field Laboratory,Chinese Academy of Sciences,Hefei,230031,China

Niu，Wei,Cao，Zhi,Wang，Yile,et al. Antisymmetric magnetoresistance in Fe3 GeTe2 nanodevices of inhomogeneous thickness[J]. Physical Review B,2021,104(12).

Niu，Wei.,Cao，Zhi.,Wang，Yile.,Wu，Zhenqi.,Zhang，Xiaoqian.,...&Pu，Yong.(2021).Antisymmetric magnetoresistance in Fe3 GeTe2 nanodevices of inhomogeneous thickness.Physical Review B,104(12).

Niu，Wei,et al."Antisymmetric magnetoresistance in Fe3 GeTe2 nanodevices of inhomogeneous thickness".Physical Review B 104.12(2021).