题名 | Patterning of quantum dots light-emitting diodes based on IGZO films |
作者 | |
通讯作者 | Liu,Pai |
DOI | |
发表日期 | 2021
|
会议名称 | International Conference on Display Technology (ICDT 2021)
|
ISSN | 0097-966X
|
EISSN | 2168-0159
|
会议录名称 | |
卷号 | 52
|
期号 | S2
|
页码 | 868-871
|
会议日期 | 5.30-6.2
|
会议地点 | Beijing, China
|
摘要 | Patterned quantum dots light-emitting diodes (QLED) with sputtered IGZO films as electron transport layers are fabricated. The pattered IGZO films can define pixels ~10 μm, while accompanied by the nonuniform current spreading effect. The localized current density distribution observed by luminance distribution during the aging degrades the device seriously. In order to overcome this issue, the patterned SiO2 layer as the bank is introduced. This work also shows a potential way to tune the out couple efficiency and micro-cavity effect (optical length) in QLED by charge transport layer thickness. |
关键词 | |
学校署名 | 第一
; 通讯
|
语种 | 英语
|
相关链接 | [Scopus记录] |
收录类别 | |
EI入藏号 | 20213910960322
|
EI主题词 | Electron transport properties
; Luminance
; Nanocrystals
; Quantum chemistry
; Semiconductor quantum dots
; Silica
|
EI分类号 | Semiconductor Devices and Integrated Circuits:714.2
; Nanotechnology:761
; Physical Chemistry:801.4
; Crystalline Solids:933.1
|
Scopus记录号 | 2-s2.0-85115826268
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:0
|
成果类型 | 会议论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/253586 |
专题 | 工学院_电子与电气工程系 |
作者单位 | 1.Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices,Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China 2.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology),Ministry of Education,Shenzhen,518055,China 3.Shenzhen Planck Innovation Technologies Co. Ltd,Shenzhen,Guangdong,China |
第一作者单位 | 电子与电气工程系; 南方科技大学 |
通讯作者单位 | 电子与电气工程系; 南方科技大学 |
第一作者的第一单位 | 电子与电气工程系 |
推荐引用方式 GB/T 7714 |
Ma,Jingrui,Jia,Siqi,Qu,Xiangwei,et al. Patterning of quantum dots light-emitting diodes based on IGZO films[C],2021:868-871.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Symp Digest of Tech (935KB) | -- | -- | 限制开放 | -- |
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