题名 | Proximity Effect of Epitaxial Iron Phthalocyanine Molecules on High-Quality Graphene Devices |
作者 | |
通讯作者 | Lin, Nian; Zhao, Yue |
发表日期 | 2021-09-01
|
DOI | |
发表期刊 | |
ISSN | 0256-307X
|
EISSN | 1741-3540
|
卷号 | 38期号:8页码:087201 |
摘要 | Depositing magnetic insulators on graphene has been a promising route to introduce magnetism via exchange proximity interaction in graphene for future spintronics applications. Molecule-based magnets may offer unique opportunities because of their synthesis versatility. Here, we investigate the magnetic proximity effect of epitaxial iron phthalocyanine (FePc) molecules on high-quality monolayer and bilayer graphene devices on hexagonal boron nitride substrates by probing the local and nonlocal transport. Although the FePc molecules introduce large hole doping effects combined with mobility degradation, the magnetic proximity gives rise to a canted antiferromagnetic state under a magnetic field in the monolayer graphene. On bilayer graphene and FePc heterostructure devices, the nonlocal transport reveals a pronounced Zeeman spin-Hall effect. Further analysis of the scattering mechanism in the bilayer shows a dominated long-range scattering. Our findings in graphene/organic magnetic insulator heterostructure provide a new insight for use of molecule-based magnets in two-dimensional spintronic devices. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | National Natural Science Foundation of China[11674150]
; Key-Area Research and Development Program of Guangdong Province[2019B010931001]
; Guangdong Innovative and Entrepreneurial Research Team Program[2016ZT06D348]
; Hong Kong RGC[16300617,
|
WOS研究方向 | Physics
|
WOS类目 | Physics, Multidisciplinary
|
WOS记录号 | WOS:000702531100001
|
出版者 | |
EI入藏号 | 20220711666578
|
EI主题词 | Graphene devices
; Hole concentration
; Hole mobility
; III-V semiconductors
; Iron
; Magnetic field effects
; Magnets
; Molecules
; Monolayers
; Spintronics
; Synthesis (chemical)
|
EI分类号 | Iron:545.1
; Electricity: Basic Concepts and Phenomena:701.1
; Magnetism: Basic Concepts and Phenomena:701.2
; Semiconducting Materials:712.1
; Nanotechnology:761
; Magnetoelectronics (Spintronics):762
; Chemical Reactions:802.2
; Chemical Products Generally:804
; Atomic and Molecular Physics:931.3
|
ESI学科分类 | PHYSICS
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:2
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/253808 |
专题 | 理学院_物理系 量子科学与工程研究院 |
作者单位 | 1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 2.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China 3.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China |
第一作者单位 | 物理系 |
通讯作者单位 | 物理系; 量子科学与工程研究院 |
第一作者的第一单位 | 物理系 |
推荐引用方式 GB/T 7714 |
Pan, Haiyang,Wang, Xiaobo,Wang, Qiaoming,et al. Proximity Effect of Epitaxial Iron Phthalocyanine Molecules on High-Quality Graphene Devices[J]. CHINESE PHYSICS LETTERS,2021,38(8):087201.
|
APA |
Pan, Haiyang.,Wang, Xiaobo.,Wang, Qiaoming.,Wu, Xiaohua.,Liu, Chang.,...&Zhao, Yue.(2021).Proximity Effect of Epitaxial Iron Phthalocyanine Molecules on High-Quality Graphene Devices.CHINESE PHYSICS LETTERS,38(8),087201.
|
MLA |
Pan, Haiyang,et al."Proximity Effect of Epitaxial Iron Phthalocyanine Molecules on High-Quality Graphene Devices".CHINESE PHYSICS LETTERS 38.8(2021):087201.
|
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