题名 | ZnS-GaP Solid Solution Thin Films with Enhanced Visible-Light Photocurrent |
作者 | |
通讯作者 | Valanoor,Nagarajan |
发表日期 | 2021
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DOI | |
发表期刊 | |
ISSN | 2574-0962
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EISSN | 2574-0962
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卷号 | 4期号:10页码:10756-10761 |
摘要 | A high photocurrent, particularly under visible-light wavelengths, is critical for developing a semiconductor photoelectrode for efficient solar-to-hydrogen conversion. Here, we demonstrate a ZnS-GaP solid solution thin film grown on a silicon substrate by pulsed laser deposition, where the growth conditions are tailored to promote intermixing throughout the entire film thickness. The photocurrent density of this solid solution film reaches a maximum of ∼27 μA/cm2 at ∼0.9 V bias, which is ∼3 times higher than that of a comparable multilayered ZnS-GaP film, where ZnS and GaP form distinct layers. In addition, the solid solution film shows up to 50 times stronger photosensitivity compared to the multilayered film. Examination of the local atomic structure and nanoscale chemistry of the solid solution thin film using transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques revealed the formation of quaternary solid solution (Ga,Zn)(P,S) and ternary (Ga,Zn)Sb phases, as well as some trace amounts of binary GaSy. These phases have previously been shown to have a direct band gap in the energy range of visible light. We thus attribute the enhanced photocurrent and photosensitivity in the solid solution film to the presence of the aforementioned phases as well as defects. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 其他
|
资助项目 | ARC[DP210102694]
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WOS研究方向 | Chemistry
; Energy & Fuels
; Materials Science
|
WOS类目 | Chemistry, Physical
; Energy & Fuels
; Materials Science, Multidisciplinary
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WOS记录号 | WOS:000711236300036
|
出版者 | |
EI入藏号 | 20214111008007
|
EI主题词 | Energy dispersive spectroscopy
; Energy gap
; Gallium phosphide
; High resolution transmission electron microscopy
; Hydrogen production
; II-VI semiconductors
; III-V semiconductors
; Light
; Light sensitive materials
; Photocurrents
; Photosensitivity
; Solar power generation
; Solid solutions
; Thin films
; Wide band gap semiconductors
|
EI分类号 | Gas Fuels:522
; Solar Power:615.2
; Electricity: Basic Concepts and Phenomena:701.1
; Semiconducting Materials:712.1
; Light/Optics:741.1
; Optical Devices and Systems:741.3
; Inorganic Compounds:804.2
; Solid State Physics:933
|
Scopus记录号 | 2-s2.0-85116691552
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:4
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/254026 |
专题 | 理学院_物理系 |
作者单位 | 1.School of Materials Science and Engineering,UNSW,Sydney,2052,Australia 2.Department of Physics,Southern University of Science and Technology (SUSTech),Shenzhen,518055,China 3.School of Energy and Environment,City University of Hong Kong,Kowloon,Tat Chee Avenue,100071,Hong Kong |
推荐引用方式 GB/T 7714 |
Musavigharavi,Pariasadat,Kurnia,Fran,Xie,Lin,et al. ZnS-GaP Solid Solution Thin Films with Enhanced Visible-Light Photocurrent[J]. ACS Applied Energy Materials,2021,4(10):10756-10761.
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APA |
Musavigharavi,Pariasadat.,Kurnia,Fran.,Xie,Lin.,Park,Collin Keon Young.,Ng,Yun Hau.,...&Valanoor,Nagarajan.(2021).ZnS-GaP Solid Solution Thin Films with Enhanced Visible-Light Photocurrent.ACS Applied Energy Materials,4(10),10756-10761.
|
MLA |
Musavigharavi,Pariasadat,et al."ZnS-GaP Solid Solution Thin Films with Enhanced Visible-Light Photocurrent".ACS Applied Energy Materials 4.10(2021):10756-10761.
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条目包含的文件 | 条目无相关文件。 |
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