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题名

ZnS-GaP Solid Solution Thin Films with Enhanced Visible-Light Photocurrent

作者
通讯作者Valanoor,Nagarajan
发表日期
2021
DOI
发表期刊
ISSN
2574-0962
EISSN
2574-0962
卷号4期号:10页码:10756-10761
摘要
A high photocurrent, particularly under visible-light wavelengths, is critical for developing a semiconductor photoelectrode for efficient solar-to-hydrogen conversion. Here, we demonstrate a ZnS-GaP solid solution thin film grown on a silicon substrate by pulsed laser deposition, where the growth conditions are tailored to promote intermixing throughout the entire film thickness. The photocurrent density of this solid solution film reaches a maximum of ∼27 μA/cm2 at ∼0.9 V bias, which is ∼3 times higher than that of a comparable multilayered ZnS-GaP film, where ZnS and GaP form distinct layers. In addition, the solid solution film shows up to 50 times stronger photosensitivity compared to the multilayered film. Examination of the local atomic structure and nanoscale chemistry of the solid solution thin film using transmission electron microscopy and energy-dispersive X-ray spectroscopy techniques revealed the formation of quaternary solid solution (Ga,Zn)(P,S) and ternary (Ga,Zn)Sb phases, as well as some trace amounts of binary GaSy. These phases have previously been shown to have a direct band gap in the energy range of visible light. We thus attribute the enhanced photocurrent and photosensitivity in the solid solution film to the presence of the aforementioned phases as well as defects.
关键词
相关链接[Scopus记录]
收录类别
EI ; SCI
语种
英语
学校署名
其他
资助项目
ARC[DP210102694]
WOS研究方向
Chemistry ; Energy & Fuels ; Materials Science
WOS类目
Chemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary
WOS记录号
WOS:000711236300036
出版者
EI入藏号
20214111008007
EI主题词
Energy dispersive spectroscopy ; Energy gap ; Gallium phosphide ; High resolution transmission electron microscopy ; Hydrogen production ; II-VI semiconductors ; III-V semiconductors ; Light ; Light sensitive materials ; Photocurrents ; Photosensitivity ; Solar power generation ; Solid solutions ; Thin films ; Wide band gap semiconductors
EI分类号
Gas Fuels:522 ; Solar Power:615.2 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Light/Optics:741.1 ; Optical Devices and Systems:741.3 ; Inorganic Compounds:804.2 ; Solid State Physics:933
Scopus记录号
2-s2.0-85116691552
来源库
Scopus
引用统计
被引频次[WOS]:4
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/254026
专题理学院_物理系
作者单位
1.School of Materials Science and Engineering,UNSW,Sydney,2052,Australia
2.Department of Physics,Southern University of Science and Technology (SUSTech),Shenzhen,518055,China
3.School of Energy and Environment,City University of Hong Kong,Kowloon,Tat Chee Avenue,100071,Hong Kong
推荐引用方式
GB/T 7714
Musavigharavi,Pariasadat,Kurnia,Fran,Xie,Lin,et al. ZnS-GaP Solid Solution Thin Films with Enhanced Visible-Light Photocurrent[J]. ACS Applied Energy Materials,2021,4(10):10756-10761.
APA
Musavigharavi,Pariasadat.,Kurnia,Fran.,Xie,Lin.,Park,Collin Keon Young.,Ng,Yun Hau.,...&Valanoor,Nagarajan.(2021).ZnS-GaP Solid Solution Thin Films with Enhanced Visible-Light Photocurrent.ACS Applied Energy Materials,4(10),10756-10761.
MLA
Musavigharavi,Pariasadat,et al."ZnS-GaP Solid Solution Thin Films with Enhanced Visible-Light Photocurrent".ACS Applied Energy Materials 4.10(2021):10756-10761.
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