Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching

Zhang, Yi1,2; Li, Rulin1; Zhang, Yongjie1; Liu, Dianzi2; Deng, Hui1

2019-08

10.1016/j.jeurceramsoc.2019.03.026

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY   影响因子和分区

0955-2219

1873-619X

To reveal dislocations in SiC wafers, conventionally, molten KOH etching method has been widely used. However, when highly doped sites exist on the wafer, the molten KOH etching method is not applicable owing to the enhanced isotropic electrochemical etching phenomenon. In this study, plasma etching is first applied to reveal dislocations in a 4H-SiC wafer with both highly doped and lightly doped areas. The mechanisms of dislocation revelation by dry etching have been theoretically analyzed and it has been revealed that the dislocation revelation ability of dry etching is highly related to the temperature of the etching process. The results demonstrate that inductively coupled plasma (ICP) etching can maintain its effectiveness for dislocation revelation of SiC wafers regardless of the doping concentrations. This work offers an alternative approach to indiscriminately and accurately reveal dislocations in SiC wafers.

Single crystal SiC Etching Dislocation Inductively coupled plasma Etch pit

SCI ; EI

英语

第一 ; 通讯

Science and Technology Innovation Committee of Shenzhen Municipality[201803023000850]

Materials Science

Materials Science, Ceramics

WOS:000469155000007

ELSEVIER SCI LTD

20191206663736

Dislocations (crystals) ; Electrochemical etching ; Etching ; Inductively coupled plasma ; Potassium hydroxide ; Silicon carbide ; Silicon compounds ; Single crystals

Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Plasma Physics:932.3 ; Crystalline Solids:933.1

MATERIALS SCIENCE

Web of Science

1.Southern Univ Sci & Technol, Dept Mech & Energy Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China
2.Univ East Anglia, Fac Sci, Engn, Norwich Res Pk, Norwich NR4 7TJ, Norfolk, England

Zhang, Yi,Li, Rulin,Zhang, Yongjie,et al. Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2019,39(9):2831-2838.

Zhang, Yi,Li, Rulin,Zhang, Yongjie,Liu, Dianzi,&Deng, Hui.(2019).Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching.JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,39(9),2831-2838.

Zhang, Yi,et al."Indiscriminate revelation of dislocations in single crystal SiC by inductively coupled plasma etching".JOURNAL OF THE EUROPEAN CERAMIC SOCIETY 39.9(2019):2831-2838.