Large Linear Magnetoresistance of High-Mobility 2D Electron System at Nonisostructural γ-Al2O3/SrTiO3 Heterointerfaces

Niu，Wei1,2; Gan，Yulin3,4; Wu，Zhenqi1; Zhang，Xiaoqian5; Wang，Yile6; Chen，Yongda2; Wang，Lixia1; Xu，Yongbing1,2; He，Liang2; Pu，Yong1; Wang，Xuefeng2

2021

10.1002/admi.202101235

Advanced Materials Interfaces   影响因子和分区

2196-7350

Materials with a large linear magnetoresistance (MR) are great candidates for magnetic sensors, but rarity boosts investigations for exploring this MR in material physics. 2D electron system (2DES) formed at the nonisostructural heterointerfaces between γ-AlO (GAO) and SrTiO (STO) provides plenty of intriguing or even superior emergent properties compared with the conventional isomorphic all-perovskite counterparts. Herein, a large MR exceeding 2000% in magnitude at the magnetic GAO/STO heterointerfaces with a high carrier mobility of 30 000 cm V s at low temperature is demonstrated. In contrast to the quadratic dependence on the magnetic field of the conventional oxide 2DES, MR in GAO/STO is linear and nonsaturating at high fields, which is stemmed from the magnetic inhomogeneities-induced inhomogeneous conductivities. In addition, weak antilocalization effect gives rise to an extra quantum correction to the MR in low-field region. Furthermore, a general qualitative picture of MR proportional to the mobility is established. These findings reveal the nonisostructural GAO/STO heterointerface is of great promise in magnetic sensor-based practical memory applications and transistor designs.

2D electron system high carrier mobility linear magnetoresistance magnetism oxide interfaces

SCI ; EI

英语

其他

WOS:000705167700001

20214111012122

Alumina ; Aluminum oxide ; Electron mobility ; Electrons ; Magnetoresistance ; Strontium titanates ; Temperature

Minerals:482.2 ; Thermodynamics:641.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Semiconducting Materials:712.1 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2

2-s2.0-85116786861

Scopus

1.New Energy Technology Engineering Laboratory of Jiangsu Provence & School of Science,Nanjing University of Posts and Telecommunications,Nanjing,210023,China
2.Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing,210093,China
3.Beijing National Laboratory for Condensed Matter and Institute of Physics,Chinese Academy of Sciences,Beijing,100190,China
4.Department of Energy Conversion and Storage,Technical University of Denmark,Lyngby,2800 Kgs,Denmark
5.Shenzhen Institute for Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
6.School of Materials Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing,210023,China

Niu，Wei,Gan，Yulin,Wu，Zhenqi,et al. Large Linear Magnetoresistance of High-Mobility 2D Electron System at Nonisostructural γ-Al2O3/SrTiO3 Heterointerfaces[J]. Advanced Materials Interfaces,2021,8.

Niu，Wei.,Gan，Yulin.,Wu，Zhenqi.,Zhang，Xiaoqian.,Wang，Yile.,...&Wang，Xuefeng.(2021).Large Linear Magnetoresistance of High-Mobility 2D Electron System at Nonisostructural γ-Al2O3/SrTiO3 Heterointerfaces.Advanced Materials Interfaces,8.

Niu，Wei,et al."Large Linear Magnetoresistance of High-Mobility 2D Electron System at Nonisostructural γ-Al2O3/SrTiO3 Heterointerfaces".Advanced Materials Interfaces 8(2021).