Controlled Synthesis of Pure-Phase GaAs Nanowires through Shear Tension

Kang，Yubin1; Na，Guangren2; Wang，Dengkui1; Tang，Jilong1; Zhang，Lijun2; Shan，Yabing3; Cong，Chunxiao3; Wei，Zhipeng1; Chen，Rui4

2021

10.1021/acsphotonics.1c01196

ACS Photonics   影响因子和分区

2330-4022

2330-4022

The identical crystal phase is one of the most critical and challenging subjects in the fabrication of low dimensional III-V semiconductors for electronic and optoelectronic applications. The polytype boundaries induced by the coexistence of wurtzite (WZ) and zinc blende (ZB) phases in the nanowire (NW) limits the device performance. It is interesting to find that the epitaxially grown GaAsSb shell outside the WZ/ZB mixed-phase GaAs NW will induce the complete transformation of WZ segments of GaAs to ZB structures due to the shear tension. The underlying physical mechanism was proposed and verified by first-principle transition barrier calculations and the Shockley partial dislocations theory. Based on the fabricated pure-phase NW, a proof-of-concept high-performance avalanche photodiode was demonstrated, which shows responsivity and a multiplication factor up to 3.3 × 103 A/W and 8.62 × 103 at -11.5 V, respectively. This work promises shear tension as an effective strategy for the controlled syntheses of single-phase semiconductor NWs and other nanostructures.

crystal phase III-V semiconductor nanowire molecular beam epitaxy shear tension strain

EI ; SCI

英语

通讯

National Natural Science Foundation of China[61674021,11674038,61704011,61904017] ; Developing Project of Science and Technology of Jilin Province[20200301052RQ] ; Project of Education Department of Jilin Province[JJKH20200763KJ] ; Youth Foundation of Changchun University of Science and Technology[XQNJJ-2018-18]

Science & Technology - Other Topics ; Materials Science ; Optics ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Optics ; Physics, Applied ; Physics, Condensed Matter

WOS:000710954200010

AMER CHEMICAL SOC

20214311080153

Gallium arsenide ; Molecular beam epitaxy ; Nanowires ; Semiconducting gallium ; Semiconductor alloys ; Zinc sulfide

Semiconducting Materials:712.1 ; Single Element Semiconducting Materials:712.1.1 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3 ; Solid State Physics:933 ; Crystal Growth:933.1.2

2-s2.0-85117833464

Scopus

1.State Key Laboratory of High Powder Semiconductor Lasers,Changchun University of Science and Technology,Changchun,130022,China
2.State Key Laboratory of Integrated Optoelectronics,Key Laboratory of Automobile Materials of MOE,School of Materials Science and Engineering,Jilin University,Changchun,130012,China
3.State Key Laboratory of ASIC and System,School of Information Science and Technology,Fudan University,Shanghai,200433,China
4.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Guangdong,518055,China

Kang，Yubin,Na，Guangren,Wang，Dengkui,et al. Controlled Synthesis of Pure-Phase GaAs Nanowires through Shear Tension[J]. ACS Photonics,2021,8(10):2889-2897.

Kang，Yubin.,Na，Guangren.,Wang，Dengkui.,Tang，Jilong.,Zhang，Lijun.,...&Chen，Rui.(2021).Controlled Synthesis of Pure-Phase GaAs Nanowires through Shear Tension.ACS Photonics,8(10),2889-2897.

Kang，Yubin,et al."Controlled Synthesis of Pure-Phase GaAs Nanowires through Shear Tension".ACS Photonics 8.10(2021):2889-2897.