Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation 通过镓离子束辐照调控单层MoS2晶体管的阈值电压

Tang，Baoshan2; Zhao，Yunshan3; Zhou，Changjie4; Zhang，Mingkun1; Zhu，Huili4; Li，Yida5; Leong，Jin Feng2; Shuai，Hao1; Gong，Hao6; Yang，Weifeng1

2021

10.1007/s40843-021-1782-y

Science China-Materials   影响因子和分区

2095-8226

2199-4501

Electronic regulation of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a crucial step towards next-generation optoelectronics and electronics. Here, we demonstrate controllable and selective-area defect engineering in 2D molybdenum disulfide (MoS) using a focused ion beam with a low-energy gallium ion (Ga) source. We find that the surface defects of MoS can be tuned by the precise control of ion energy and dose. Furthermore, the field-effect transistors based on the monolayer MoS show a significant threshold voltage modulation over 70 V after Ga irradiation. First-principles calculations reveal that the Ga impurities in the monolayer MoS introduce a defect state near the Fermi level, leading to a shallow acceptor level of 0.25 eV above the valence band maximum. This defect engineering strategy enables direct writing of complex pattern at the atomic length scale in a controlled and facile manner, tailoring the electronic properties of 2D TMDCs for novel devices.

defect engineering field-effect transistors Ga ion irradiation two-dimensional transition metal dichalcogenides

SCI ; EI

中文

其他

Department of Science and Technology of Fujian Province["2020J01704","2019L3008"]

Materials Science

Materials Science, Multidisciplinary

WOS:000709259300002

SCIENCE PRESS

20214311049426

Calculations ; Electronic properties ; Field effect transistors ; Gallium ; Ion beams ; Ion bombardment ; Ions ; Layered semiconductors ; Molybdenum compounds ; Monolayers ; Sulfur compounds ; Surface defects ; Threshold voltage ; Transition metals

Metallurgy and Metallography:531 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Mathematics:921 ; High Energy Physics:932.1 ; Crystalline Solids:933.1 ; Materials Science:951

2-s2.0-85117366004

Scopus

1.Department of Microelectronics and Integrated Circuit,School of Electronic Science and Engineering,Xiamen University,Xiamen,361005,China
2.Department of Electrical and Computer Engineering,National University of Singapore,Singapore,117576,Singapore
3.NNU-SULI Thermal Energy Research Center (NSTER) & Center for Quantum Transport and Thermal Energy Science (CQTES),School of Physics and Technology,Nanjing Normal University,Nanjing,210023,China
4.Department of Physics,School of Science,Jimei University,Xiamen,361021,China
5.Engineering Research Center of Integrated Circuits for Next-Generation Communications,Ministry of Education,Southern University of Science and Technology,Shenzhen,518055,China
6.Department of Materials Science and Engineering,National University of Singapore,Singapore,117575,Singapore

Tang，Baoshan,Zhao，Yunshan,Zhou，Changjie,等. Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation 通过镓离子束辐照调控单层MoS2晶体管的阈值电压[J]. Science China-Materials,2021,65:741-747.

Tang，Baoshan.,Zhao，Yunshan.,Zhou，Changjie.,Zhang，Mingkun.,Zhu，Huili.,...&Yang，Weifeng.(2021).Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation 通过镓离子束辐照调控单层MoS2晶体管的阈值电压.Science China-Materials,65,741-747.

Tang，Baoshan,et al."Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation 通过镓离子束辐照调控单层MoS2晶体管的阈值电压".Science China-Materials 65(2021):741-747.