Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer

Zhu，Xiaolong1; Wu，Jianqiang1; Hu，Qimin1; Hao，Xia2; Li，Wei1; Liu，Cai3; Su，Rong4

2021-12-01

10.1116/6.0001257

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A   影响因子和分区

0734-2101

1520-8559

To achieve high-quality and low-cost ZnTe epitaxial films, a low-temperature (LT, 200 °C) ZnSe buffer layer with a thickness of 5 nm was grown on Si (111) wafers prior to the epitaxy of ZnTe layers by molecular beam epitaxy. Reflection high-energy electron diffraction patterns reveal that ZnTe epilayers grown at 335 °C with a thickness of 100 nm on the LT-ZnSe buffer layer present a completely two-dimensional growth mode. Film surfaces present smooth and flat morphology with the lowest surface roughness of ∼2.2 nm at a Te/Zn beam equivalent pressure ratio of 1.6. X-ray diffraction θ-2θ scanning indicates that the out-of-plane structure of ZnTe films is highly preferred with the (111) growth orientation of ZnSe/Si. X-ray diffraction φ scanning further confirms that the in-plane structure of ZnTe epilayer is also a single-crystal orientation growth. Thus, high-quality ZnTe (111) single-crystal epilayer with the lowest full-width at half-maximum of ∼200 arc sec and the smallest dislocation density of ∼1.12 × 108 cm-2 was grown on Si (111) wafers. In addition, the ZnSe buffer layer could alleviate the residual stress effectively for the heteroepitaxy of Si wafers. The most balanced residual stress for ZnTe/ZnSe/Si with σ x of ∼96.5 MPa and σ y of ∼94.2 MPa was obtained, which is essential for achieving high-performance and good mechanical properties of ZnTe-based devices.

SCI ; EI

英语

通讯

National Natural Science Foundation of China (NNSFC)[61704115] ; Science and Technology Program of Sichuan Province, China["2020YFSY0064","2019YFG0262","2019ZDZX0015"]

Materials Science ; Physics

Materials Science, Coatings & Films ; Physics, Applied

WOS:000711195300002

A V S AMER INST PHYSICS

20214411107233

Buffer layers ; Crystal orientation ; Epilayers ; Molecular beam epitaxy ; Morphology ; Residual stresses ; Selenium compounds ; Silicon compounds ; Silicon wafers ; Single crystals ; Surface roughness ; Tellurium compounds ; Temperature ; Thin films ; Titanium compounds ; X ray diffraction ; Zinc Selenide

Thermodynamics:641.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Atomic and Molecular Physics:931.3 ; Crystalline Solids:933.1 ; Crystal Lattice:933.1.1 ; Crystal Growth:933.1.2 ; Materials Science:951

MATERIALS SCIENCE

2-s2.0-85118297883

Scopus

1.College of Materials Science and Engineering,Sichuan University,Chengdu,610064,China
2.Institute of New Energy and Low-carbon Technology,Sichuan University,Chengdu,610027,China
3.Guangdong Provincial Key Laboratory of Quantum Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
4.Tongwei Solar (Chengdu),Chengdu,610299,China

Zhu，Xiaolong,Wu，Jianqiang,Hu，Qimin,et al. Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,2021,39(6).

Zhu，Xiaolong.,Wu，Jianqiang.,Hu，Qimin.,Hao，Xia.,Li，Wei.,...&Su，Rong.(2021).Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,39(6).

Zhu，Xiaolong,et al."Improved growth quality of epitaxial ZnTe thin films on Si (111) wafer with ZnSe buffer layer".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A 39.6(2021).