题名 | Effects of cetyltrimethylammonium bromide (CTAB) on electroplating twin-structured copper interconnects |
作者 | |
DOI | |
发表日期 | 2021-09-14
|
ISBN | 978-1-6654-1392-3
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会议录名称 | |
页码 | 1-6
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会议日期 | 14-17 Sept. 2021
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会议地点 | Xiamen, China
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摘要 | Twin-structured copper possesses great potential in advanced interconnect electroplating because of high performance and high reliability. Whereas, the issue of surface nonuniformity restricts its practices in integrated circuits and demands a prompt solution. A novel additive strategy based on coexisting cetyltrimethylammonium bromide (CTAB) and gelatin is proposed and effects of CTAB to bath electrochemistry and material properties are investigated. With an optimum concentration of CTAB, the electroplating formular enables improved surface leveling and filling height coplanarity for twin-structured copper filling in 15/15m line/space redistribution layer (RDL) patterns. |
关键词 | |
学校署名 | 其他
|
语种 | 英语
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相关链接 | [Scopus记录] |
收录类别 | |
EI入藏号 | 20214511119712
|
EI主题词 | Copper
; Integrated circuit interconnects
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EI分类号 | Electroplating:539.3.1
; Copper:544.1
; Semiconductor Devices and Integrated Circuits:714.2
|
Scopus记录号 | 2-s2.0-85118458838
|
来源库 | Scopus
|
全文链接 | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9567924 |
引用统计 |
被引频次[WOS]:1
|
成果类型 | 会议论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/255444 |
专题 | 工学院 |
作者单位 | 1.Shenzhen Institute of Advanced Electronic Materials,Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences (CAS),Shenzhen,518055,China 2.College of Engineering,Southern University of Science and Technology,Shenzhen,518055,China |
第一作者单位 | 工学院 |
推荐引用方式 GB/T 7714 |
Dong,Yi,Li,Zhe,Gao,Li Ying,et al. Effects of cetyltrimethylammonium bromide (CTAB) on electroplating twin-structured copper interconnects[C],2021:1-6.
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条目包含的文件 | 条目无相关文件。 |
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