南方科技大学知识苑(SUSTech KC): Development of GaN-Based Micro-LED Display Technology 氮化镓基Micro-LED显示技术研究进展

题名	Development of GaN-Based Micro-LED Display Technology 氮化镓基Micro-LED显示技术研究进展
作者	Jiang，Fulong1 ; Xu，Feifan 2; Liu，Zhaojun1 ; Liu，Bin 2; Zheng，Youdou 2
通讯作者	Liu，Zhaojun; Liu，Bin; Zheng，Youdou
发表日期	2020-11-01
发表期刊	人工晶体学报影响因子和分区
ISSN	1000-985X
卷号	49 期号:11页码:2013-2023
摘要	Modern society has realized informationization and is developing towards intelligentization. The technology of display is the key tache to achieve the information intercharge and intelligence. Among the many display technologies, the Micro-LED display has emerged as the next-generation displays due to the excellent properties, such as high contrast, fast response, wide color gamut, low power consumption and long lifetime which could be used in the application with advanced display needs. However, in the commercialization of Micro-LED display technology, there are still some technical bottlenecks that have not been solved. For epitaxial technology, the substrate selection, wavelength uniformity and defect management need to be considered for the application of Micro-LED display. For the Micro-LED devices, there is still no effective solution to solve the efficiency attenuation. Furthermore, by using the color conversion media, the monolithic full-color display technology is not yet mature which need further investigation. Starting from the above three issues, this article reviews the development and the current technical issues of Micro-LED displays.
关键词	Efficiency attenuation Epitaxy GaN Micro-LED device Micro-LED display Micro-LED full-color display
相关链接	[Scopus记录]
语种	中文
学校署名	第一 ; 通讯
Scopus记录号	2-s2.0-85099472555
来源库	Scopus
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/255952
专题	工学院_电子与电气工程系
作者单位	1.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China 2.School of Electronic Science and Engineering,Nanjing University,Nanjing,210093,China
第一作者单位	电子与电气工程系
通讯作者单位	电子与电气工程系
第一作者的第一单位	电子与电气工程系
推荐引用方式 GB/T 7714	Jiang，Fulong,Xu，Feifan,Liu，Zhaojun,等. Development of GaN-Based Micro-LED Display Technology 氮化镓基Micro-LED显示技术研究进展[J]. 人工晶体学报,2020,49(11):2013-2023.
APA	Jiang，Fulong,Xu，Feifan,Liu，Zhaojun,Liu，Bin,&Zheng，Youdou.(2020).Development of GaN-Based Micro-LED Display Technology 氮化镓基Micro-LED显示技术研究进展.人工晶体学报,49(11),2013-2023.
MLA	Jiang，Fulong,et al."Development of GaN-Based Micro-LED Display Technology 氮化镓基Micro-LED显示技术研究进展".人工晶体学报 49.11(2020):2013-2023.