题名 | Realizing High-Ranged Out-of-Plane ZTs in N-Type SnSe Crystals through Promoting Continuous Phase Transition |
作者 | |
通讯作者 | He, Jiaqing; Zhao, Li-Dong |
发表日期 | 2019-07
|
DOI | |
发表期刊 | |
ISSN | 1614-6832
|
EISSN | 1614-6840
|
卷号 | 9期号:28 |
摘要 | Thermoelectric technology enables direct conversion between heat and electricity. The conversion efficiency of a thermoelectric device is determined by the average dimensionless figure of merit ZT(ave). Here, a record high ZT(ave) of approximate to 1.34 in the range of 300-723 K in n-type SnSe based crystals is reported. The remarkable thermoelectric performance derives from the high power factor and the reduced thermal conductivity in the whole temperature range. The high power factor is realized by promoting the continuous phase transition in SnSe crystals through alloying PbSe, which results in a higher symmetry of the crystal structure and the correspondingly modified electronic band structure. Moreover, PbSe alloying induces mass and strain fluctuations, which enables the suppression of thermal transport. These findings provide a new strategy to enhance the thermoelectric performance for the continuous phase transition materials. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 通讯
|
资助项目 | Shanghai talent development funding[2017031]
|
WOS研究方向 | Chemistry
; Energy & Fuels
; Materials Science
; Physics
|
WOS类目 | Chemistry, Physical
; Energy & Fuels
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
WOS记录号 | WOS:000477664700010
|
出版者 | |
EI入藏号 | 20192707124288
|
EI主题词 | Alloying
; Chromium compounds
; Crystal symmetry
; Electric power factor
; IV-VI semiconductors
; Layered semiconductors
; Lead alloys
; Strain
; Thermal conductivity
; Thermoelectricity
; Tin compounds
|
EI分类号 | Metallurgy:531.1
; Lead and Alloys:546.1
; Tin and Alloys:546.2
; Thermodynamics:641.1
; Electricity: Basic Concepts and Phenomena:701.1
; Crystal Lattice:933.1.1
; Materials Science:951
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:90
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/25600 |
专题 | 理学院_物理系 公共分析测试中心 |
作者单位 | 1.Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China 2.Southern Univ Sci & Technol, Shenzhen Key Lab Thermoelect Mat, Shenzhen 518055, Peoples R China 3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 4.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China 5.Henan Normal Univ, Coll Phys & Mat Sci, Xinxiang 453007, Henan, Peoples R China |
通讯作者单位 | 南方科技大学; 物理系 |
推荐引用方式 GB/T 7714 |
Chang, Cheng,Wang, Dongyang,He, Dongsheng,et al. Realizing High-Ranged Out-of-Plane ZTs in N-Type SnSe Crystals through Promoting Continuous Phase Transition[J]. Advanced Energy Materials,2019,9(28).
|
APA |
Chang, Cheng.,Wang, Dongyang.,He, Dongsheng.,He, Wenke.,Zhu, Fangyuan.,...&Zhao, Li-Dong.(2019).Realizing High-Ranged Out-of-Plane ZTs in N-Type SnSe Crystals through Promoting Continuous Phase Transition.Advanced Energy Materials,9(28).
|
MLA |
Chang, Cheng,et al."Realizing High-Ranged Out-of-Plane ZTs in N-Type SnSe Crystals through Promoting Continuous Phase Transition".Advanced Energy Materials 9.28(2019).
|
条目包含的文件 | 条目无相关文件。 |
|
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论