Dimensional Crossover and Topological Nature of the Thin Films of a Three-Dimensional Topological Insulator by Band Gap Engineering

Wang, Zhenyu1,2,7; Zhou, Tong1; Jiang, Tian1,6; Sun, Hongyi4,5,9; Zang, Yunyi3; Gong, Yan3; Zhang, Jianghua3,7; Tong, Mingyu6; Xie, Xiangnan1; Liu, Qihang4,5,8; Chen, Chaoyu4,5; He, Ke3,7; Xue, Qi-Kun3,7

2019-07

10.1021/acs.nanolett.9b01641

NANO LETTERS   影响因子和分区

1530-6984

1530-6992

Identification and control of topological phases in topological thin films offer great opportunities for fundamental research and the fabrication of topology-based devices. Here, combining molecular beam epitaxy, angle-resolved photoemission spectroscopy, and ab initio calculations, we investigate the electronic structure evolution in (Bi1-xInx)(2)Se-3 films (0 <= x <= 1) with thickness from 2 to 13 quintuple layers. By employing both thickness and In substitution as two independent "knobs" to control the gap change, we identify the evolution between several topological phases, i.e., dimensional crossover from a three-dimensional topological insulator to its two-dimensional counterpart with gapped surface state, and topological phase transition from a topological insulator to a normal semiconductor with increasing In concentration. Furthermore, by introducing In substitution, we experimentally demonstrated the trivial topological nature of Bi2Se3 thin films (below 6 quintuple layers) as two-dimensional gapped systems, consistent with our theoretical calculations. Our results provide not only a comprehensive phase diagram of (Bi1-xInx)(2)Se-3 and a route to control its phase evolution but also a practical way to experimentally determine the topological properties of a gapped compound by a topological phase transition and band gap engineering.

Topological insulator band engineering topological phase transition dimensional crossover density functional theory angle-resolved photoemission spectroscopy

SCI ; EI

英语

NI论文

通讯

Science, Technology and Innovation Commission of Shenzhen Municipality[ZDSYS20170303165926217] ; Science, Technology and Innovation Commission of Shenzhen Municipality[JCYJ20170412152620376]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000475533900054

AMER CHEMICAL SOC

20192607115524

Bismuth compounds ; Calculations ; Density functional theory ; Electric insulators ; Electronic structure ; Energy gap ; Molecular beam epitaxy ; Phase diagrams ; Photoelectron spectroscopy ; Selenium compounds ; Thin films ; Topological insulators

Mathematics:921 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4 ; Probability Theory:922.1 ; Atomic and Molecular Physics:931.3

MATERIALS SCIENCE

Web of Science

1.Natl Univ Def Technol, Coll Comp, State Key Lab High Performance Comp, Changsha 410073, Hunan, Peoples R China
2.Acad Mil Sci PLA China, Natl Innovat Inst Def Technol, Beijing 100010, Peoples R China
3.Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
4.Southern Univ Sci & Technol SUSTech, Shenzhen Inst Quantum Sci & Engn SIQSE, Shenzhen 518055, Peoples R China
5.Southern Univ Sci & Technol SUSTech, Dept Phys, Shenzhen 518055, Peoples R China
6.Natl Univ Def Technol, Coll Adv Interdisciplinary Studies, Changsha 410073, Hunan, Peoples R China
7.Beijing Acad Quantum Informat Sci, Beijing 100084, Peoples R China
8.Ctr Quantum Comp, Peng Cheng Lab, Shenzhen 518055, Peoples R China
9.Southeast Univ, Sch Phys, Nanjing 211189, Jiangsu, Peoples R China

Wang, Zhenyu,Zhou, Tong,Jiang, Tian,et al. Dimensional Crossover and Topological Nature of the Thin Films of a Three-Dimensional Topological Insulator by Band Gap Engineering[J]. NANO LETTERS,2019,19(7):4627-4633.

Wang, Zhenyu.,Zhou, Tong.,Jiang, Tian.,Sun, Hongyi.,Zang, Yunyi.,...&Xue, Qi-Kun.(2019).Dimensional Crossover and Topological Nature of the Thin Films of a Three-Dimensional Topological Insulator by Band Gap Engineering.NANO LETTERS,19(7),4627-4633.

Wang, Zhenyu,et al."Dimensional Crossover and Topological Nature of the Thin Films of a Three-Dimensional Topological Insulator by Band Gap Engineering".NANO LETTERS 19.7(2019):4627-4633.