题名 | Enhanced Thermoelectric Performance Achieved in SnTe via the Synergy of Valence Band Regulation and Fermi Level Modulation |
作者 | |
通讯作者 | Fu,Liangwei; Wu,Di; He,Jiaqing |
发表日期 | 2021-10-27
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DOI | |
发表期刊 | |
ISSN | 1944-8244
|
EISSN | 1944-8252
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卷号 | 13期号:42页码:50037-50045 |
摘要 | SnTe is deemed a promising mid-temperature thermoelectric material for low toxicity, low cost, and decent performance. Sole doping/alloying on Sn sites was reported to result in either modified band alignment or reduced lattice thermal conductivity, thus contributing to an enhanced overall thermoelectric figure of merit. However, this strategy alone is always unable to take full use of the material's advantage, especially considering that it simultaneously pushes the hole concentration off the optimal range. In this work, we adopted a two-step approach to optimize the thermoelectric performance of SnTe in order to overcome the limitation. First, Mn was alloyed into Sn sites to increase the density of state effective mass of SnTe by regulating the valence bands; the Fermi level was further regulated by iodine doping, guided by a refined two-band model. Additionally, the lattice thermal conductivity was also suppressed by the microstructure optimizing via Mn doping and additional phonon scattering at ITe mass/strain fluctuation. As a result, a high ZT of 1.4 at 873 K was achieved for Sn0.91Mn0.09Te0.99I0.01. This study provides a way to refine the single doping stratagem used in other thermoelectric materials. |
关键词 | |
相关链接 | [Scopus记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | National Natural Science Foundation of China[51802146,11934007,11874194,51632005]
; leading talents of the Guangdong Province Program[00201517]
; Science, Technology, and Innovation Committee Foundation of Shenzhen["KQTD2016022619565991","JCYJ20200109141205978","ZDSYS20141118160434515"]
|
WOS研究方向 | Science & Technology - Other Topics
; Materials Science
|
WOS类目 | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
|
WOS记录号 | WOS:000713052700041
|
出版者 | |
EI入藏号 | 20214611145356
|
EI主题词 | Crystal lattices
; Fermi level
; Hole concentration
; IV-VI semiconductors
; Thermal conductivity
; Thermoelectric equipment
; Thermoelectricity
; Tin
; Tin compounds
; Valence bands
|
EI分类号 | Tin and Alloys:546.2
; Thermoelectric Energy:615.4
; Thermodynamics:641.1
; Electricity: Basic Concepts and Phenomena:701.1
; Semiconducting Materials:712.1
; Atomic and Molecular Physics:931.3
; Crystal Lattice:933.1.1
|
Scopus记录号 | 2-s2.0-85118777212
|
来源库 | Scopus
|
引用统计 |
被引频次[WOS]:17
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/256177 |
专题 | 理学院_物理系 前沿与交叉科学研究院 |
作者单位 | 1.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China 2.Academy for Advanced Interdisciplinary Studies,Southern University of Science and Technology,Shenzhen,518055,China 3.School of Materials Science and Engineering,Shaanxi Normal University,Xi'an,710119,China |
第一作者单位 | 物理系; 前沿与交叉科学研究院 |
通讯作者单位 | 物理系 |
第一作者的第一单位 | 物理系 |
推荐引用方式 GB/T 7714 |
Xu,Xiao,Cui,Juan,Fu,Liangwei,et al. Enhanced Thermoelectric Performance Achieved in SnTe via the Synergy of Valence Band Regulation and Fermi Level Modulation[J]. ACS Applied Materials & Interfaces,2021,13(42):50037-50045.
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APA |
Xu,Xiao.,Cui,Juan.,Fu,Liangwei.,Huang,Yi.,Yu,Yong.,...&He,Jiaqing.(2021).Enhanced Thermoelectric Performance Achieved in SnTe via the Synergy of Valence Band Regulation and Fermi Level Modulation.ACS Applied Materials & Interfaces,13(42),50037-50045.
|
MLA |
Xu,Xiao,et al."Enhanced Thermoelectric Performance Achieved in SnTe via the Synergy of Valence Band Regulation and Fermi Level Modulation".ACS Applied Materials & Interfaces 13.42(2021):50037-50045.
|
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