High Anisotropic Optoelectronics in Two Dimensional Layered PbSnX2 (X = S/Se)

Xu, Wangping1,2,3,4; Xie, Zijuan3,4; Su, Jun3,4; Wang, Rui2; Wu, Xiaozhi2; Xu, Hu3,4,5,6

2021-11-04

10.1021/acs.jpclett.1c02876

Journal of Physical Chemistry Letters   影响因子和分区

1948-7185

We systematically study the giant anisotropic optoelectronics in layered PbSnX2 (X = S/Se). The highly anisotropic optoelectronics mainly originates from the asymmetric sublattices SnX, resulting in the anisotropy of photoelectronic properties with fascinating visible light absorption range in single-layer and bilayer PbSnX2. We employ uniaxial strain in both the x and y directions and find an indirect-to-direct band gap transition, while the quasiparticle indirect band gap presents excellent linear scaling with biaxial strain in monolayer PbSnX2. We also demonstrate ultrahigh anisotropic mobilities of electrons (mu(y) > mu(x)) and holes (mu(x) > mu(y)) in both single-layer and bilayer PbSnX2 (X = S/Se), and spin-orbit coupling effects and the increase of layer number significantly reduce exciton binding energies and band gaps. Finally, the strong layer dependence of the band structure is clearly seen when the film thickness is less than 4 layers. Our results provide a fundamental understanding of highly anisotropic PbSnX2 (X = S/Se) and show two potential candidates in photoelectric applications.

SCI ; EI

英语

NI论文

通讯

National Natural Science Foundation of China (NSFC)[11974160,11674148,11847301,12174040] ; Science, Technology, and Innovation Commission of Shenzhen Municipality["RCYX20200714114523069","ZDSYS20190902092905285"] ; Fundamental Research Funds for the Central Universities[2019CDQYWL029] ; Fund of the Guangdong Provincial Key Laboratory of Computational Science and Material Design[2019B030301001]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Atomic, Molecular & Chemical

WOS:000716456200013

AMER CHEMICAL SOC

20214611151789

Binding energy ; Energy gap ; Light absorption ; Sulfur compounds

Light/Optics:741.1 ; Physical Chemistry:801.4 ; Physical Properties of Gases, Liquids and Solids:931.2

Web of Science

1.Xiangtan Univ, Hunan Inst Adv Sensing & Informat Technol, Xiangtan 411105, Hunan, Peoples R China
2.Chongqing Univ, Dept Phys, Chongqing 401331, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
4.Southern Univ Sci & Technol, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
5.Southern Univ Sci & Technol, Guangdong Prov Key Lab Computat Sci & Mat Design, Shenzhen 518055, Peoples R China
6.Shenzhen Key Lab Adv Quantum Funct Mat & Devices, Shenzhen 518055, Peoples R China

Xu, Wangping,Xie, Zijuan,Su, Jun,et al. High Anisotropic Optoelectronics in Two Dimensional Layered PbSnX2 (X = S/Se)[J]. Journal of Physical Chemistry Letters,2021,12(43):10574-10580.

Xu, Wangping,Xie, Zijuan,Su, Jun,Wang, Rui,Wu, Xiaozhi,&Xu, Hu.(2021).High Anisotropic Optoelectronics in Two Dimensional Layered PbSnX2 (X = S/Se).Journal of Physical Chemistry Letters,12(43),10574-10580.

Xu, Wangping,et al."High Anisotropic Optoelectronics in Two Dimensional Layered PbSnX2 (X = S/Se)".Journal of Physical Chemistry Letters 12.43(2021):10574-10580.